參數(shù)資料
型號(hào)： SMBJ12AVCL
廠商： VISHAY SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 31K
代理商： SMBJ12AVCL
SMBJ12AVCL
Vishay Semiconductors
formerly General Semiconductor
Document Number 88393
www.vishay.com
5-Mar-02
1
New Product
Surface Mount TransZorb
Transient Voltage Suppressor
Peak Pulse Power 600W
Steady State Power 5W
Stand-off Voltage 12V
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
DO-214AA
(SMB)
Dimensions in
inches and
(millimeters)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Protects voltage sensitive IC's and MOS technology
Glass Passivated Junction
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Excellent Clamping capability
Available in unidirectional only
Mechanical Data
Case: JEDEC DO-214AA molded plastic body over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: The band denotes the cathode, which is positive
with respect to the anode under normal TVS operation
Mounting Position: Any
Weight: 0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7" plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton
Mounting Pad Layout
Maximum Ratings and Thermal Characteristics TA= 25OC unless otherwise noted.
Parameter
Symbol
SMBJ12AVC
Unit
Device marking code
BUX
Steady state power dissipation(3), TA = 50
°C
PM(AV)
5.0
W
Peak pulse power dissipation (Fig.1)(1)
PPPM
600
W
Stand-off voltage
VWM
12.0
V
Typical thermal resistance junction-to-lead
R
θJL
20
°C/W
Typical thermal resistance junction-to-ambient
R
θJA
100
°C/W
Storage temperature range
TSTG
–55 to +175
°C
Maximum junction temperature
TJ
150
°C
Electrical Characteristics TA= 25OC unless otherwise noted.
Min - Max. breakdown voltage at 1.0mA
V(BR)
13.2 – 14.3
V
Max. clamping voltage at 17.5A, 1.4/6.5
s-waveform
Vc
15.8
V
Maximum DC reverse leakage current at VWM
ID
5.0
A
Typical temperature coefficient of V(BR)
∝T
19.9
mV°C
Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC
(2) Pulse test: tp < 50ms
(3) On infinite heatsink
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
相關(guān)PDF資料
PDF描述
SMBJ130CA-HE3/52 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ100-HE3/5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ100CA-HE3/5B 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ10C-HE3/52 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ11-HE3/5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMBJ12C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12Vr 600W 30.2A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ12C/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ12C/2 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ12C/2B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMBJ12C/5 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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