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| 型號： | SMBJ10C |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 118K |
| 代理商： | SMBJ10C |
RATING AND CHARACTERISTIC CURVES
SMBJ SERIES
FIG.1 - PULSE DERATING CURVE
P
E
A
K
P
U
L
S
E
D
E
R
A
T
IN
G
IN
%
O
F
P
E
A
K
P
O
W
E
R
O
R
C
U
R
E
N
T
25
75
100
125
150
0
50
100
0
175
75
25
200
10 X 1000 WAVEFORM
AS DEFINED BY R.E.A.
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
0
20
Pulse Width 8.3ms
Single Half-Sine-Wave
40
60
80
100
120
FIG.4 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
STAND-OFF VOLTAGE, VOLTS
10
1
100
10000
1000
100
10
1000
Bi-directional
TJ = 25 C
Uni-directional
P
M
(A
V
)
S
T
E
A
D
Y
S
T
A
T
E
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(W
)
FIG.6 - STEADY STATE POWER DERATING CURVE
TL,LEAD TEMPERATURE,
℃
25
75
100
125
150
0.0
50
0
175
200
0.5
1.0
1.5
2.0
2.5
DC Current
JUNCTION TEMPERATURE, ℃
FIG.5 - PULSE RATING CURVE
P
,
P
E
A
K
P
O
W
E
R
(
K
W
)
TP, PULSE WIDTH
0.1
1.0
10
0.1us
1.0us
10us
100us
1.0ms
10ms
100
TA=25 C
5.0mm LEAD AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
FIG.3 - PULSE WAVEFORM
0
IP
,
P
E
A
K
P
U
L
S
E
C
U
R
E
N
T
,
(%
)
T , TIME ( ms )
50
100
1.0
2.0
3.0
4.0
TR=10us
Peak value (IRSM)
TP
10 x 1000 waveform as
defined by R.E.A.
Pulse width (TP) is defined
as that point where the
peak current decays to
50% of IRSM
TJ=25 C
IRSM
2
Half value=
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SMBJ10C/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 10V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ10C/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 10V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ10C/5 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 10V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ10C/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 10V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBJ10C/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 10V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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