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參數(shù)資料
| 型號： | SMBG8.0CA/51-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封裝： | PLASTIC, SMBG, 2 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 121K |
| 代理商： | SMBG8.0CA/51-E3 |
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P(
re
wo
P
esl
u
P
ka
e
P
I(
tn
err
u
C
ro
)
P
)
%,
eg
at
ne
cr
e
P
ni
gni
ta
re
D
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
P
M
P
—
)
Wk
(
re
wo
P
esl
u
P
ka
e
P
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s
10
s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
1
10
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I
M
S
F
—
)
A(
tn
err
u
C
eg
ru
S
dr
a
wr
o
F
ka
e
P
tp — Pulse Duration (sec)
(
ec
na
de
p
mI
la
mr
eh
Tt
nei
sn
ar
T
°
)
W/
C
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I
M
P
—
I
%,t
ne
rr
u
C
esl
u
P
ka
e
P
M
S
R
Fig. 3 – Pulse Waveform
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
C
J
—
)
Fp
(
ec
nat
ic
ap
a
C
noi
tc
nu
J
Fig. 4 – Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
VWM — Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
SMBG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88456
4
24-Jul-03
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PDF描述 |
|---|---|
| SMBG8.5/52-E3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBG8.5/5B-E3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBG8.5C/5B-E3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBG9.0/51-E3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| SMBG60CA/51-E3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SMBG85 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR |
| SMBG85A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount TRANSZORB? Transient Voltage Suppressors |
| SMBG85A/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBG85A/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMBG85A/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 85V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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