- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄271912 > SMB10J30HE3/5B (VISHAY SEMICONDUCTORS) 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF資料下載
參數(shù)資料
| 型號： | SMB10J30HE3/5B |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 103K |
| 代理商： | SMB10J30HE3/5B |
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88422
Revision: 22-Oct-08
4
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
72
°C/W
Typical thermal resistance, junction to lead
RθJL
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMB10J5.0A-E3/52
0.106
52
750
7" diameter plastic tape and reel
SMB10J5.0A-E3/5B
0.106
5B
3200
13" diameter plastic tape and reel
SMB10J5.0AHE3/52 (1)
0.106
52
750
7" diameter plastic tape and reel
SMB10J5.0AHE3/5B (1)
0.106
5B
3200
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
SMB8J5.0C -
SMB8J40CA
SMB10J5.0 -
SMB10J40A
0.1
1
10
100
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
25
50
75
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
P
eak
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 s Waveform
as defined by R.E.A.
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
10
1
Bi-Directional
100
200
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
V
R, Measured at
Stand-Off
Voltage V
WM
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMB10J6.5AHE3/5B | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMB8J9.0CAHE3/52 | 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SHD114523 | 60 A, SILICON, RECTIFIER DIODE |
| S5JHE3/57T | 5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SB1220-AP | 12 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SMB10J33 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors |
| SMB10J33A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors |
| SMB10J33A-E3/2C | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J33A-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMB10J33A-E3/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1000W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。