參數(shù)資料
型號(hào)： SMB10J13-E3/5B
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 103K
代理商： SMB10J13-E3/5B
SMB10(8)J5.0(C) thru SMB10(8)J40(C)A
Vishay General Semiconductor
Document Number: 88422
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
PRIMARY CHARACTERISTICS
VWM
5.0 V to 40 V
PPPM (uni-directional)
1000 W
PPPM (bi-directional)
800 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s
waveform (1)(2) (Fig. 1)
uni-directional
bi-directional
PPPM
1000
800
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料
PDF描述
SMB10J6.0A-HE3/5B 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
S2DA 1.5 A, 200 V, SILICON, RECTIFIER DIODE
SS10P3-M3/87A 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A
SS1P4LHM3/84A 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA
SS25SHE3/61T 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SMB10J13HE3/2C 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1KW 13V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMB10J13HE3/52 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1KW 13V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMB10J13HE3/55 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1KW 13V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMB10J13HE3/5B 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1KW 13V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
SMB10J14 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
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