- 您現在的位置：買賣IC網 > PDF目錄40246 > SMAJ20C (LITE-ON SEMICONDUCTOR CORP) 400 W, BIDIRECTIONAL, SILICON, TVS DIODE PDF資料下載
參數資料
| 型號： | SMAJ20C |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 0K |
| 代理商： | SMAJ20C |
RATING AND CHARACTERISTIC CURVES
SMAJ SERIES
FIG.1 - PULSE DERATING CURVE
PEAK
PUL
SE
DERA
T
ING
I
N
%
O
F
PEAK
P
O
W
E
R
O
R
C
U
R
E
N
T
25
75
100
125
150
0
50
100
0
175
75
25
200
10 X 1000 WAVEFORM AS
DEFINED BY R.E.A.
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PE
AK
F
O
R
W
A
R
D
S
U
R
G
E
CU
RR
EN
T
,
AM
PERES
1
5
10
50
100
2
20
0
10
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
20
30
40
50
60
PM
(A
V
),
STEAD
Y
S
T
A
T
E
PO
W
E
R
D
IS
S
IP
A
T
IO
N
(
W
)
FIG.6 - STEADY STATE POWER DERATING CURVE
TL, LEAD TEMPERATURE
25
75
100
125
150
0.0
50
0
175
200
0.2
0.4
0.6
0.8
1.0
60Hz RESISTIVE OR
INDUCTIVE LOAD
FIG.4 - TYPICAL JUNCTION CAPACITANCE
C
APACI
T
ANCE
,
(p
F
)
STAND-OFF VOLTAGE, VOLTS
10
1
100
10000
1000
100
10
1000
Uni-directional
Bi-directional
TJ = 25 C
AMBIENT TEMPERATURE, C
FIG.5 - PULSE RATING CURVE
P
,PE
AK
P
O
W
E
R
(
K
W
)
TP, PULSE WIDTH
0.1
1.0
10
0.1us
1.0us
10us
100us
1.0ms
10ms
100
TA=25 C
5.0mm LEAD AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
REV. 4, 12-Jan-2004, KSIA02
FIG.3 - PULSE WAVEFORM
0
IP,
PEAK
PUL
S
E
CURRENT
,
(
%
)
T , TIME ( ms )
50
100
1.0
2.0
3.0
4.0
TR=10us
Peak value (IRSM)
TP
10 x 1000 waveform as
defined by R.E.A.
Pulse width (TP) is defined
as that point where the
peak current decays to
50% of IRSM
TJ=25 C
IRSM
2
Half value=
相關PDF資料 |
PDF描述 |
|---|---|
| SMAJ8.5C | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| SMAJ6.0C | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| SMAJ90C | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| SMAJ33 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SMAJ120 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMAJ20C/13 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 20V 10% Bi RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ20C/5A | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 20V 10% Bi RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ20C/61 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 20V 10% Bi RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ20C/63 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 400W 20V 10% Bi RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMAJ20CA | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 20Vr 400W 12.3A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復。