參數(shù)資料
型號： SMA661ASTR
廠商： 意法半導(dǎo)體
英文描述： GPS HIGH GAIN LNA ICs
中文描述： 全球定位系統(tǒng)高增益低噪聲放大器集成電路
文件頁數(shù)： 1/10頁
文件大?。?/td> 163K
代理商： SMA661ASTR
1/10
October 2005
SMA661AS
GPS HIGH GAIN LNA ICs
Rev. 2
GENERAL FEATURES
■
LOW NOISE FIGURE 1.4 dB @ 1.575 GHz
■
HIGH GAIN 17 dB @ 1.575 GHz
■
POWER DOWN FUNCTION
■
TEMPERATURE COMPENSATED
■
UNCONDITIONALLY STABLE
■
INTEGRATED OUTPUT MATCHING
■
ESD PROTECTION (
±
2kV HBM)
■
70 GHz Silicon Germanium TECHNOLOGY
■
LEAD-FREE STRAIGHT PACKAGE (SOT666)
APPLICATIONS
■
GPS
DESCRIPTION
SMA661AS is a product of the SMA Family
(Silicon MMIC Amplifiers), it uses ST state-of-the
art SiGe BiCMOS technology.
The excellent RF performances (17dB Gain and
1.4dB NF at 1.575GHz) and the few external
component counts (just one capacitor) make the
SMA661AS an ideal solution for GPS Low Noise
Amplifier. SMA661AS embeds a power down
function avoiding to use an external switch; in
power down mode (V
PD
≤
V
PDL
) the current con-
sumption is about 10 nA. It is housed in ultra min-
iature SOT666 plastic package (1.65mm x
1.2mm x 1.57mm).
Figure 1. Package
Table 1. Pin Connection
Table 2. Order Codes
Figure 2. Circuit Schematic
Pin No.
Pin Name
1
RF IN
2
GND
3
PD
4
RF OUT
5
GND
6
Vcc
Top View
3
4
1
2
5
6
SOT666 (Lead-Free)
1.65 x 1.2 x 0.57 mm
Package
Tape and Reel
SOT666
SMA661ASTR
SMA661AS
RF input
RF IN (1)
VCC (6)
GND (2,5)
RF Output
C1
RF OUT(4)
PD (3)
33nF
PRELIMINARY DATA
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