參數(shù)資料
型號(hào)： SMA5114
廠商： SANKEN ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel With built-in flywheel diode
中文描述： 3 A, 60 V, 0.25 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SMA, SIP-12
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 22K
代理商： SMA5114
107
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re
(yfs)
-I
D
Characteristics (Typical)
R
DS(ON)
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
Characteristic curves
Symbol
Unit
Conditions
V
R
V
F
I
R
t
rr
120
V
V
I
R
=10
μ
A
I
F
=1A
V
R
=120V
I
F
=
±
100mA
1.0
1.2
10
μ
A
ns
100
SMA5114
(T
a
=25
°
C)
Symbol
Ratings
Unit
V
DSS
V
GSS
I
D
I
D(
pulse
)
E
AS
*
I
AS
60
±
20
±
3
V
V
A
A
mJ
A
W
W
±
6 (PW
≤
1ms, Du
≤
1%)
6.8
3
4
(Ta=25
°
C, with all circuits operating, without heatsink)
28 ((
Tc=25
°
C,
with all circuits operating, with infinite heatsink
)
31.2 (
Junction-Air, Ta=25
°
C, with all circuits operating
)
°
C/W
4.46 (
Junction-Case, Tc=25
°
C, with all circuits operating
)
°
C/W
150
–40 to +150
θ
j–a
θ
j–c
Tch
Tstg
°
C
°
C
* : V
DD
=20V, L=1mH, I
L
=3A, unclamped,
see Fig. E on page 15.
P
T
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
60
V
I
D
=100
μ
A, V
GS
=0V
V
GS
=
±
20V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=1.0A
V
GS
=10V, I
D
=1.0A
V
GS
=4V, I
D
=1.0A
V
DS
=10V,
f=1.0MHz,
V
GS
=0V
I
D
=1A,
V
DD
30V,
R
L
=30
, V
GS
=5V,
see Fig. 3 on page 16.
I
SD
=3A, V
GS
=0V
I
SD
=
±
100mA
±
10
100
2.5
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
1.0
1.0
2.3
0.20
0.25
170
130
20
80
170
330
150
1.0
80
0.25
0.30
Ciss
Coss
Crss
td
(
on
)
t
r
td
(off)
t
f
V
SD
t
rr
1.5
Specification
typ
min
max
R
DS(ON)
Specification
typ
min
max
11
10
12
8
5
1
9
4
3
2
7
6
0
2
4
6
8
0
3
2
1
10
V
DS
(V)
I
D
3.4V
3.2V
3V
V
GS
=2.8V
10V
0
1
2
0
1
2
3
3
V
GS
(V)
I
D
4
5
(V
DS
=10V)
T
C
=0
°
C
25
°
C
15
°
C
0
1
0
0.2
0.1
0.3
0.4
0.5
I
D
(A)
R
D
2
3
V
GS
=4V
10V
0.05
0.1
0.5
0.2
1
0.5
5
10
1
I
D
(A)
R
3
(V
DS
=10V)
T
C
=–40
°
C
125
°
C
25
°
C
–40
0
0
0.2
0.1
0.3
0.4
0.5
50
T
C
(
°
C)
R
D
)
100
150
(I
D
=1A)
V
GS
=4V
10V
0
20
V
DS
(V)
10
30
1
10
5
50
100
500
40
50
C
Ciss
Coss
Crss
V
GS
=0V
f=1MHz
0
0.5
1.0
1.5
0
1
2
3
V
SD
(V)
I
D
V
G
=
5
1
0.5
5
50
10
0.1
0.05
1
0.5
5
10
100
V
DS
(V)
I
D
10m (1ho)
1m
100
μ
s
R
DS (ON)
LIMITED
I
D
(pulse) max
(T
C
=25
°
C)
25
30
20
15
10
5
0
With Silicone Grease
Natural Cooling
All Circuits Operating
0
50
100
150
T
a
(
°
C)
P
T
WthIninteHeasn
Without Heatsink
N-channel
With built-in flywheel diode
Absolute maximum ratings
I
Equivalent circuit diagram
External dimensions
B
SMA
Electrical characteristics
G
Diode for flyback voltage absorption
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