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參數(shù)資料
| 型號： | SMA5102 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel With built-in flywheel diode |
| 中文描述： | 4 A, 100 V, 0.6 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SMA, SIP-12 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 22K |
| 代理商： | SMA5102 |
98
I
D
-V
DS
Characteristics (Typical)
I
D
-V
GS
Characteristics (Typical)
R
DS(ON)
-I
D
Characteristics (Typical)
Re
(yfs)
-I
D
Characteristics (Typical)
R
DS(ON)
-T
C
Characteristics (Typical)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
Safe Operating Area (SOA)
P
T
-T
a
Characteristics
Characteristic curves
SMA5102
(T
a
=25
°
C)
Symbol
Unit
Conditions
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(
yfs
)
R
DS(
ON
)
Ciss
Coss
t
on
t
off
V
SD
t
rr
100
V
nA
μ
A
V
S
pF
pF
ns
ns
V
ns
I
D
=250
μ
A, V
GS
=0V
V
GS
=
±
20V
V
DS
=100V, V
GS
=0V
V
DS
=10V, I
D
=250
μ
A
V
DS
=10V, I
D
=4A
V
GS
=10V, I
D
=4A
V
DS
=25V, f=1.0MHz,
V
GS
=0V
I
D
=4A, V
DD
see Fig. 3 on page 16.
I
SD
=4A, V
GS
=0V
I
SD
=
±
100mA
±
500
250
4.0
2.0
1.1
1.7
0.50
180
82
40
40
1.2
250
0.60
50V, V
GS
=10V,
2.0
(T
a
=25
°
C)
Symbol
Ratings
Uni
V
DSS
V
GSS
I
D
I
D(
pulse
)
E
AS
*
I
F
I
FSM
V
R
100
±
20
±
4
V
V
A
A
mJ
A
A
V
W
W
±
8 (PW
≤
1ms)
16
4 (PW
≤
0.5ms, Du
≤
25%)
8 (PW
≤
10ms, Single pulse)
120
4
(Ta=25
°
C, with all circuits operating, without heatsink)
28 (
Tc=25
°
C,
with all circuits operating, with infinite heatsink
)
31.2 (
Junction-Air, Ta=25
°
C, with all circuits operating
)
°
C/W
4.46 (
Junction-Case, Tc=25
°
C, with all circuits operating
)
°
C/W
150
–40 to +150
θ
j–a
θ
j–c
Tch
Tstg
°
C
°
C
* : V
DD
=20V, L=1mH, I
D
=5A, unclamped, see Fig. E on page 15.
P
T
Specification
typ
min
max
Symbol
Unit
Conditions
V
R
V
F
I
R
t
rr
120
V
V
I
R
=10
μ
A
I
F
=1A
V
R
=120V
I
F
=
±
100mA
1.0
1.2
10
μ
A
ns
100
Specification
typ
min
max
1
2
5
4
6
3
8
9
12
11
10
7
0
20
8
7
3
0
6V
7V
V
DS
(V)
I
D
10
6
5
4
2
1
10V
V
GS
=5V
25
°
C
125
°
C
0
2
4
6
10
I
D
V
GS
(V)
T
C
=–40
°
C
8
8
7
3
0
6
5
4
2
1
(V
DS
=10V)
0
0
1
2
8
0.2
0.4
0.6
0.8
I
D
(A)
R
D
)
3
4
5
6
7
(V
DS
=10V)
0.2
0.05
0.5
1
1
5
(V
DS
=10V)
25
°
C
125
°
C
I
D
(A)
R
5
8
0.5
T
C
=–40
°
C
0.1
–40
0
0
50
100
150
0.2
0.8
1.0
1.2
V =10V
GS
I
D
=4A
R
D
)
T
C
(
°
C)
0.6
0.4
0
10
20
30
40
50
10
50
100
600
V
DS
(V)
C
5
V
GS
=0V
f=1MHz
Ciss
Coss
Crss
0
0
1.0
1.5
2
7
8
I
D
V
SD
(V)
0.5
1
3
4
6
5
5V
10V
V
GS
=0V
0.5
0.1
1
5
V
DS
(V)
10
50
100
1
5
10
I
D
0.5
(T
C
=25
°
C)
1m
1m (so)
LMTED
100
μ
s
I
D
(pulse) max
R
DS ON
25
30
20
15
10
5
0
With Silicone Grease
Natural Cooling
All Circuits Operating
0
50
100
150
T
a
(
°
C)
P
T
Wt niieHasn
Without Heatsink
N-channel
With built-in flywheel diode
External dimensions
B
SMA
Absolute maximum ratings
Electrical characteristics
G
Diode for flyback voltage absorption
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| SMA5106 | 制造商:Sanken Electric Co Ltd 功能描述:Trans MOSFET N-CH 100V 4A 12-Pin SIP Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANSISTOR ARRAY W/DIO |
| SMA5106_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:N-channel With built-in flywheel diode |
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