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參數(shù)資料
| 型號： | SMA1 |
| 英文描述： | Cascadable Amplifier 5 to 500 MHz |
| 中文描述： | 級聯(lián)放大器5至500 MHz |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 370K |
| 代理商： | SMA1 |
Cascadable Amplifier
5 to 500 MHz
A1/ SMA1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
V3
1
Electrical Specifications: Z
0
= 50
, V
CC
= +15 V
DC
Parameter
Typical
Guaranteed
25oC
0o to 50oC
-54o to +85oC*
Frequency
1-600
5-500
5-500
Small Signal Gain (min)
dB
16.0
15.0
14.5
Gain Flatness (max)
dB
±0.2
±0.7
±1.0
Reverse Isolation
dB
19
Noise Figure (max)
dB
2.4
3.0
3.5
Power Output
@ 1 dB comp. (min)
dBm
-1.0
-2.0
-3.0
IP3
dBm
+11
IP2
dBm
+10
Second Order Harmonic IP
dBm
+15
VSWR Input / Output (max)
1.3:1 / 1.3:1
1.8:1 / 1.8:1
2.0:1 / 2.0:1
DC Current @ 15 Volts (max)
mA
9
11
12
Units
Features
LOW NOISE: 2.4 dB (TYP.)
LOW VSWR: 1.3:1 (TYP.)
HIGH GAIN: 16 dB (TYP.)
Description
The A1 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance and
high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. Both TO-8 and Surface Mount packages are
hermetically sealed, and MIL-STD-883 environmental screening
is available
.
Product Image
Ordering Information
Part Number
Package
A1
TO-8
SMA1
Surface Mount
CA1
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62oC to +125oC
Case Temperature
+125oC
DC Voltage
+18 V
Continuous Input Power
+13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 μsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125oC
Thermal Data: V
CC
= +15 V
DC
Parameter
Rating
Thermal Resistance θ
jc
130oC/W
Transistor Power Dissipation P
d
0.057 W
Junction Temperature Rise
Above Case T
jc
7oC
* Over temperature performance limits for part number CA1, guaranteed from 0
o
C to +50
o
C only.
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