參數(shù)資料
型號: SM8S11AHE3/2D
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-1
文件頁數(shù): 4/5頁
文件大?。?/td> 92K
代理商: SM8S11AHE3/2D
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88387
208
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10 thru SM8S43A
Vishay General Semiconductor
New Product
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
t - Pulse Width (s)
100
10
1
0.1
0.01
0.1
1
10
100
RθJC
RθJA
Tr
a
n
s
ient
Thermal
Impedance
(°C/W)
VWM - Reverse Stand-Off Voltage (V)
100 000
10 000
1000
10
C
J-
Junction
Capacitance
(pF)
40
35
30
25
20
15
45
Measured at Stand-Off
Voltage V
WM
Measured at Zero Bias
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
DO-218AB
Mounting Pad Layout
0.413 (10.5)
0.374 (9.5)
0.091 (2.3)
0.067 (1.7)
0.116 (3.0)
0.093 (2.4)
0.150 (3.8)
0.126 (3.2)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.116 (3.0)
0.093 (2.4)
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.342 (8.7)
0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.028 (0.7)
0.020 (0.5)
0.138 (3.5)
0.098 (2.5)
Lead 1
0.098 (2.5)
0.059 (1.5)
Lead 2/Metal Heatsink
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
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