- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40197 > SM6T27A UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF資料下載
參數(shù)資料
| 型號： | SM6T27A |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 55K |
| 代理商： | SM6T27A |
SM6T SERIES
TRANSZORB SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts
FEATURES
For surface mounted applications in order
to optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast reponse time: typically less than 1ps from 0 volts to
VBR min.
Typical ID less than 1A above 10V
High temperature soldering: 250°C/10 seconds
at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types: Color band
denotes positive end (cathode)
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS
VALUE
UNIT
Peak Pulse Power Dissipation on 10/1000s
waveform (NOTES 1, 2, Fig. 1)
PPPM
Minimum 600
Watts
Peak Pulse Current on 10/1000s
waveform (NOTE 1, Fig. 3)
IPPM
See Table 1
Amps
Power Dissipation on Infinite Heatsink, TA=50
°CPM(AV)
5.0
Watts
Peak Forward Surge Current, 10ms Single Half Sine-wave,
IFSM
100
Amps
Undirectional Only
Max. Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-65 to +175
°C
Thermal Resistance Junction to Ambient Air (NOTE 2)
R
ΘJA
100
°C/W
Thermal Resistance Junction to Leads
R
ΘJL
20
°C/W
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
(2) Mounted on 5.0mm2 (.013mm thick) land areas.
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.205 (5.21)
0.220 (5.59)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
0.130 (3.30)
0.155 (3.94)
MAX.
DO-214AA
Dimensions in inches and (millimeters)
NEW PRODUCT
1/21/99
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SM6T10CA | BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SM6T22C | BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SM712.TCT | 400 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| SM8S11AHE3/2D | 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM8S12HE3/2D | 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SM6T27A | 制造商:STMicroelectronics 功能描述:DIODE TVS SMB 600W 27V |
| SM6T27A/2 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 27V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T27A/5 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 27V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T27A/52 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 27V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM6T27A/55 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 600W 27V 5% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。