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參數(shù)資料
| 型號： | SM6S36HE3/2D |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | SM6S36HE3/2D |
Document Number: 88384
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
196
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM6S10 thru SM6S36A
Vishay General Semiconductor
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 3 - Pulse Waveform
Fig. 4 - Reverse Power Capability
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
0.95
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SM6S10AHE3/2D (1)
2.550
2D
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
0
2.0
4.0
6.0
8.0
0
50
100
150
200
Power
Di
ss
ipation
(W)
Case Temperature (°C)
0
2000
1000
3000
4000
5000
6000
25
50
75
100
125
150
175
Load
Dump
Power
(W)
Case Temperature (°C)
0
50
100
150
0
1.0
2.0
3.0
4.0
Input
Peak
Pul
s
e
Current
(%)
t - Time (ms)
t
d
t
r = 10 μs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J = 25 °C
Pulse Width (t
d) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
Rever
s
e
S
urge
Power
(W)
1000
10 000
10
100
Pulse Width (ms) - IPP Exponential Waveform
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