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參數(shù)資料
| 型號： | SM160 |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Silicon epitaxial planer type |
| 中文描述： | 硅外延龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SM160 |
SM120 THRU SM160
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, SM-1 (MELF)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.015 gram
(V)
(V)
(V)
(V)
(
o
C)
SM120
-
20
14
20
SM130
-
30
21
30
SM140
-
40
28
40
SM150
-
50
35
50
SM160
-
60
42
60
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.55
0.70
-55 to +125
-55 to +150
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
40
A
V
R
= V
RRM
T
A
= 25
o
C
1.0
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
50
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
110
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
MELF Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
Dimensions in inches and (millimeters)
SM-1
.105(2.7)
.095(2.4)
.205(5.2)
.190(4.8)
.024(.60)
.018(.46)
SOLDERABLE
ENDS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SM140 | Silicon epitaxial planer type |
| SM150 | Silicon epitaxial planer type |
| SM140 | 1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| SM150 | 1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| SM160 | 1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
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