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參數(shù)資料
| 型號(hào)： | SM10LZ47 |
| 廠商： | Toshiba Corporation |
| 英文描述： | RESISTOR: 49.9 OHM, 1/10W, 1%, PACKAGE 0805 |
| 中文描述： | 交流電源控制應(yīng)用 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 99K |
| 代理商： | SM10LZ47 |
SM10LZ47
2001-07-10
1
TOSHIBA BI
DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM10LZ47
AC POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 800V
R.M.S. On
State Current
High Commutation (dv / dt)
Isolation Voltage
MAXIMUM RATINGS
: I
T (RMS)
=
1
0A
: V
ISOL
=
1
500V AC
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off
State Voltage
V
DRM
800
V
R.M.S On
State Current
(Full Sine Waveform)
I
T (RMS)
10
A
100 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
110 (60Hz)
A
I
2
t Limit Value
I
2
t
50
A
2
s
Critical Rate of Rise of On
State
Current
(Note)
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Gate Voltage
V
FGM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Isolation Voltage (AC, t = 1min.)
V
ISOL
1500
V
Note:
di / dt test condition
V
DRM
= 0.5 × Rated, I
TM
≤
15A, t
gw
≥
10μs,
t
gr
≤
250ns, i
gp
= I
GT
× 2.0
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13
10H1A
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