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參數(shù)資料
| 型號(hào)： | SLVU2.8K-4UE3 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 292K |
| 代理商： | SLVU2.8K-4UE3 |
LOW VOLTAGE UNIDIRECTIONAL
TVSarray
SCOTTSD A L E DIVISION
SLVU2.8K – 4U
W
.Mi
cr
os
em
i
.C
O
M
SLVU2.8K
–
4U
SYMBOLS & DEFINITIONS
Symbol
DEFINITION
VWM
Standoff Voltage: Maximum dc voltage that can be applied over the operating temperature range.
VWM must be selected to be equal or be greater than the operating voltage of the line to be protected.
VPT
Punch-Thru Voltage: The minimum voltage the device will exhibit at a specified current
VSB
Snap-Back Voltage: The minimum snap-back voltage the device will exhibit at a specified current
VC
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 s.
ID
Standby Current: Current at VWM.
C
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
GRAPHS
8/20
s 500W Pulse
P
PP
–
Pe
ak
Pulse
Power
(W
)
Pulse Time t=
sec
FIGURE 2
FIGURE 1
Pulse Wave Form
Peak Pulse Power vs. Pulse Time
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
MSCXXXX.PDF 10-6-2003 REV 0
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