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參數(shù)資料
| 型號： | SLVE2.8K |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 191K |
| 代理商： | SLVE2.8K |
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2001
MSC1706.PDF 08-01 2001 REV B
WWW
.M
ic
ro
sem
i
.COM
SLVE2.8K
BIDIRECTIONAL TVSarray
PRODUCT PREVIEW
S C OT T S DAL E D IV IS IO N
FIGURE 1
Peak Pulse Power Vs Pulse Time
S Y M B OL S & D E F I NIT I O N S
Symbol
DEFINITION
VWM
Rated stand off voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected.
VPT
Punch-Thru Voltage: The minimum voltage the device will exhibit at a specified current.
VSB
Snap-Back Voltage: The minimum snap back voltage the device will exhibit at a specific current.
VC
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 s.
ID
Standby Current: Leakage current at VWM.
C
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in Pico
Farads.
GRAPHS
PACKAGING AND S C HEM A TIC
FIGURE 2
Pulse Wave Form
P
p
P
eak
P
u
lse
P
o
wer
(kW)
GRAPHS
PACK
AGE
DATA
8/20 s 400W Pulse
100ns
1s
10s
100s
1ms
10ms
10000
1000
100
10
PAD DIMENSIONS
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
.032
.040
.813
1.016
A1
.040
.048
1.016
1.219
B
---
.057
---
1.448
C
---
.087
---
2.210
D
.075
1.905
E
.067
1.702
G
.032
.040
.813
1.016
H
.134
.140
3.404
3.556
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
.070
.080
1.778
2.032
B
.047
.055
1.194
1.397
C
.030
.037
.762
.940
C1
.015
.020
.381
.508
D
.110
.119
2.794
3.023
E
.035
.044
.889
1.118
F
.071
.079
1.803
2.007
G
.0006
.006
.015
.152
H
.003
.007
.076
.178
I
.018
.023
.457
.584
J
.083
.093
2.108
2.362
SCHEMATIC
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