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參數(shù)資料
| 型號： | SLVE2.8 |
| 廠商： | Semtech Corporation |
| 英文描述： | EPD TVS⑩ Diodes For ESD and Latch-Up Protection |
| 中文描述： | 環(huán)保署二極管⑩二極管ESD和鎖定保護(hù) |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 78K |
| 代理商： | SLVE2.8 |
5
2001 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
Applications Information
(continued)
EPD TVS
Characteristics
The SLV series is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVE2.8 & SLVG2.8 can
effectively operate at 2.8V while maintaining excellent
electrical characteristics.
SLVE2.8 & SLVG2.8
I
PP
I
SB
I
PT
I
R
V
RWM
V
V
PT
V
C
V
BRR
I
BRR
SB
EPD TVS VI Characteristic Curve
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (V
). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (V
) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight “snap-back” or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLVE2.8TC | EPD TVS⑩ Diodes For ESD and Latch-Up Protection |
| SLVG2.8TC | EPD TVS⑩ Diodes For ESD and Latch-Up Protection |
| SLVU2.8-4 | ULTRA LOW CAPACITANCE TVS ARRAY |
| SLVU2.8 | XTAL CER SMT 7X5 2PAD |
| SLVU2.8TC | Low Voltage EPD TVS⑩ Diodes For ESD and Latch-Up Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SLVG2.8 | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:EPD TVS⑩ Diodes For ESD and Latch-Up Protection |
| SLVG2.8.TCT | 制造商:Semtech Corporation 功能描述:ESD Suppressor TVS ±15KV 4-Pin(3+Tab) SOT-143 T/R 制造商:Semtech Corporation 功能描述:BI-DIRECTIONAL 2.8V TVS DIODE / LEAD-FRE |
| SLVG2.8TC | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:EPD TVS⑩ Diodes For ESD and Latch-Up Protection |
| SLVS141A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:FIXED NEGATIVE 5-V 200-mA INVERTING DC/DC CONVERTER |
| SLVS155A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:ADJUSTABLE INVERTING DC/DC CONVERTER |
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