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參數(shù)資料
| 型號： | SLR-50HL1 |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO DARLINGTON DETECTOR |
| 封裝： | HERMETIC, TO-18, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 37K |
| 代理商： | SLR-50HL1 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLR-50HL Series
NPN Photodarlington
Features
Narrow receiving angle
Spectrally matched to IRED
NPN planar epitaxial process
TO-18 hermetic dome lens package
Multiple sensitivity ranges
Extended temperature range
Description
The SLR-50HL series consists of an NPN silicon
planar
photodarlington
transistor
mounted
in
a
hermetically sealed TO-18 dome lens package. The
first stage base lead is connected to provide switching
control and circuitry biasing if needed. This series of
photodarlington devices is ideal in low irradiance
applications
where
higher
gain
is
needed.
The
hermetic package provides high reliability in hostile
environments. The various sensitivity ranges available
provide the desired output to meet multiple application
demands.
Absolute Maximum Ratings
Storage Temperature Range
-65
°C to +150°C
Operating Temperature Range
-55
°C to +125°C
Power Dissipation @ 25
°C (1)
250mW
Soldering Temperature (2)
260
°C
Collector
Base
Emitter
Dimensions in mm.
5.1
0.8
12 Min
1.0
4.7
2.5
1.3
45
50°
Directional Sensitivity Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
10°
20°
30°
40°
60°
70°
80°
90°
100°
1.0
0.8
0.6
0.4
0°
120°
Half Angle = 15°
20°
40°
60°
80°
100°
Notes: (1) Derate @ 2.5mW/
°C above 25°C.
(2) >2 mm from case for <5 sec.
(3) Ee = source @
λ = 940 nm
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol Parameter
Min. Typ Max. Units
Test Conditions
IC(ON)
On-State Collector Current:
SLR-50HL1 0.5
mA
VCE=5V, Ee=0.2mW/cm
2 @2854
°K
SLR-50HL2 2.0
mA
VCE=5V, Ee=0.2mW/cm
2 @2854
°K
SLR-50HL3 4.0
mA
VCE=5V, Ee=0.2mW/cm
2 @2854
°K
SLR-50HL4 8.0
mA
VCE=5V, Ee=0.2mW/cm
2 @2854
°K
ICEO
Collector Dark Current
100
nA
VCE=10V, Ee=0
BVCEO
Collector-Emitter Breakdown Voltage
40
V
IC=100
A, Ee=0
BVCBO
Collector-Base Breakdown Voltage
60
V
IC=100
A, Ee=0
BVECO
Emitter-Collector Breakdown Voltage
10
V
IE= -100
A, Ee=0
VCE(SAT) Collector to Emitter Saturation Voltage
1.1
V
IC=0.5mA, Ee=0.2mW/cm
2
tr
Rise & Fall Time
75
s
RL=100
, I
C=0.5mA, VCC=5V (3)
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
15
deg
(off center-line)
Specifications subject to change without notice.
103223 REV 1
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