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參數(shù)資料
| 型號： | SLD304XT-24 |
| 元件分類： | 激光器 |
| 英文描述： | 807 nm, LASER DIODE |
| 封裝： | M-273(LO-10), 8 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | SLD304XT-24 |
– 3 –
SLD301B
Example of Representative Characteristics
Optical power output vs. Forward current
IF – Forward current [mA]
0
250
500
0
100
200
P
O
–
Optical
power
output
[mW]
Tc = –10°C
Tc = 0°C
Tc = 25°C
Tc = 50°C
Threshold current vs. Temperature characteristics
Tc – Case temperature [°C]
–10
0
1020304050
100
500
1000
Ith
–
Threshold
current
[mA]
Power dependence of far field pattern
Angle [degree]
–30
–20
–10
0
102030
Radiation
intensity
(optional
scale)
Tc = 25°C
PO = 90mW
PO = 60mW
PO = 30mW
Power dependence of near field pattern
50m
Radiation
intensity
(optional
scale)
Tc = 25°C
PO = 90mW
PO = 75mW
PO = 50mW
PO = 25mW
Oscillation wavelength vs. Temperature characteristics
Tc – Case temperature [°C]
–10
0
1020304050
780
790
830
820
810
800
λp
–
Oscillation
wavelength
[nm]
PO = 90mW
Differential efficiency vs. Temperature characteristics
Tc – Case temperature [°C]
–10
0
50
40
30
20
10
0
0.5
1.0
1.5
η
D
–
Dif
ferential
ef
ficiency
[mW/mA]
(Parallel to junction)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLD304XT | 770 nm, LASER DIODE |
| SLD323XT-24 | 807 nm, LASER DIODE |
| SLD323XT-2 | 810 nm, LASER DIODE |
| SLD335F | LASER DIODE |
| SLD342YT-24 | 807 nm, LASER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SLD304XT-25 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
| SLD304XT-3 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
| SLD-3091FZ | 制造商:SIRENZA 制造商全稱:SIRENZA 功能描述:30 Watt Discrete LDMOS FET in Ceramic Flanged Package |
| SLD30N-1DH2B-R | 制造商:IDEC CORPORATION 功能描述:SLD series 30mm 24VAC/LED disp |
| SLD30N-1TH1B-A | 制造商:IDEC Corporation 功能描述:Display Light |
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