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參數(shù)資料
| 型號： | SLD304B |
| 元件分類： | 激光器 |
| 英文描述： | 770 nm, LASER DIODE |
| 封裝： | M-261, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | SLD304B |
– 3 –
SLD304B
Example of Representative Characteristics
Threshold current vs. Temperature characteristics
Tc – Case temperature [
°C]
–10
0
20
10
30
100
1000
500
Ith
–
Threshold
current
[mA]
Optical power output vs. Forward current
IF – Forward current [mA]
0
500
1000
1500
2000
0
500
1000
P
O
–
Optical
power
output
[mW]
Tc = –10
°C
Tc = 0
°C
Tc = 25
°C
Tc = 15
°C
Tc = 30
°C
780
810
830
800
790
820
λp
–
Oscillation
wavelength
[nm]
Oscillation wavelength vs. Temperature characteristics
Tc – Case temperature [
°C]
–10
0
10203040
PO = 900mW
0
0.5
1.0
η
D
–
Dif
ferential
ef
ficiency
[mW/mA]
Differential efficiency vs. Temperature characteristics
Tc – Case temperature [
°C]
–10
0
10203040
Power dependence of far field pattern
Angle [degree]
–30
–20
–10
0
102030
Radiation
intensity
(optional
scale)
Tc = 15
°C
PO = 900mW
PO = 500mW
PO = 200mW
PO = 50mW
Power dependence of near field pattern
200
m
Radiation
intensity
(optional
scale)
Tc = 15
°C
PO = 600mW
PO = 400mW
PO = 200mW
PO = 900mW
PO = 800mW
(Parallel to junction)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SLD304V | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
| SLD304V-1 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
| SLD304V-2 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
| SLD304V-21 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
| SLD304V-24 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:1000mW High Power Laser Diode |
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