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| 型號(hào)： | SLD-74D1/4 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | DIP-8 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | SLD-74D1/4 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-74D1/4
Photodiode Array
Features
4 planar photodiode elements
Wide acceptance angle
Low capacitance, fast switching time
Low leakage current
Linear response vs irradiance
8 pin Dual In-line package
Description
This Silonex photodiode array consists of four
passivated silicon elements that are individually
connected to terminals on the edge of the package.
This photodetector is designed to operate in either
photovoltaic or reverse bias mode. It has excellent
linearity in response versus light intensity. Low dark
current and low capacitance makes it the ideal
detector for fast rise time applications.
An epoxy
dome protects the array elements from mechanical
damage while providing a wide angle of view.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (1)
260
°C
Notes: (1) >2 mm from case for <5sec
(2) Ee = source @ 2854
°K
(3) Ee = source @
λ = 940 nm
(4) Matching = ISC(MAX) / ISC(MIN)
C= Cathode, A= Anode
Chip size: 3.6 mm X 3.6 mm
Active Area: 9.8 sq.mm.
Dimensions in mm. (+/-0.13)
16.3
4.2
4.4
2.5
3.0
1.5 Max
12.3
2.0
10.2
A4 C4 C3 A3
A2 C2 C1 A1
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics per Element (TA=25
°C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units Test Conditions
ISC
Short Circuit Current
360
500
A
VR = 0 V, Ee = 25 mW/cm
2 (2)
VOC
Open Circuit Voltage
0.40
V
VR = 0 V, Ee = 25 mW/cm
2 (2)
ID
Reverse Dark Current
100
nA
VR = 0.1 V, Ee = 0
CJ
Junction Capacitance
180
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
4
s
VR=10V, RL=1k
(3)
tF
Fall Time
6
s
VR=10V, RL=1k
(3)
TCI
Temp. Coef., ISC
+0.2
%/
°C (2)
MISC
Short Circuit Current Matching
1.2
VR = 0 V, Ee = 25 mW/cm
2 (2), (4)
VBR
Reverse Breakdown Voltage
50
V
IR = 100
A, Ee = 0
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice
102691 REV 1
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