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參數(shù)資料
| 型號(hào)： | SLD-68HF1B |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | SLD-68HF1B |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68HF1
Planar Photodiode
Features
Low capacitance, fast switching time
Low leakage current
Linear response vs irradiance
Hermetic package with flat window
Multiple dark current ranges available
Description
This
small
area
planar,
passivated
silicon
photodetector is designed to operate in either
photovoltaic or reverse bias mode.
It provides
excellent linearity in output signal versus light
intensity.
Low dark current and low capacitance
makes it the ideal detector for fast rise time
applications.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +125°C
Operating Temperature
-40
°C to +125°C
Soldering Temperature (3)
260
°C
Notes: (1) Ee = light source @ 2854
°K
(2) Ee = light source @
λ = 880 nm
(3) >2 mm from case for < 5 sec.
Cathode
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25 min.
45°
Dimensions in mm.
Tolerance +/-0.13
3.9
0.8
4.7
0.41 - 0.48
5.3
2.54
(Common to case)
0
.2
.4
.6
.8
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100° 1.0
.8
.6
.4
120°
Half Angle = 35°
Directional Sensitivity Characteristics
0
20°
40°
60°
80°
100°
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
110
130
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-68HF1A
100
nA
VR=100mV, Ee=0
SLD-68HF1B
100
nA
VR=5V, Ee=0
SLD-68HF1C
10
nA
VR=5V, Ee=0
SLD-68HF1D
1
nA
VR=5V, Ee=0
SLD-68HF1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=10V, RL=1k
(2)
tF
Fall Time
1.5
s
VR=10V, RL=1k
(2)
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
950
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
35
deg
(off center-line)
Specifications subject to change without notice
102537 REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLD-68HF1C | PHOTO DIODE |
| SLD-68HF | PHOTO DIODE |
| SLD-69IR1B | PHOTO DIODE |
| SLD-69IR1D | PHOTO DIODE |
| SLD-69IR1E | PHOTO DIODE |
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