參數(shù)資料
型號(hào): SLCD-61N8
元件分類: 光敏二極管
英文描述: PHOTO DIODE
文件頁(yè)數(shù): 1/1頁(yè)
文件大小: 25K
代理商: SLCD-61N8
SLCD-61N8
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Available in arrays where # indicates number of
elements ( maximum of 8 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency.
They are particularly
suited to power conversion applications due to their
low internal impedance and relatively high shunt
impedances, and stability.
These devices also
provide
a
reliable,
inexpensive
detector
for
applications
such
as
light
beam
sensing
and
instrumentation. The electrical characteristics below
are per element.
In the multielement arrays the
cathodes are common to a all elements.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +125°C
Operating Temperature
-40
°C to +125°C
Anode
Cathode
Sensitive Area
(2.7 sq. mm.)
Dimensions in mm. (+/- 0.13)
1.3
3.4
0.4
Also available with leads as part number SLSD-71N8
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
100
170
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current
1.7
A
VR=5V, Ee=0
CJ
Junction Capacitance
100
pF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
Specifications subject to change without notice
104118 REV 0
Notes: (1) Ee = light source @ 2854
°K
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