參數(shù)資料
型號(hào)： SLA5009
廠商： SANKEN ELECTRIC CO LTD
元件分類(lèi)： JFETs
英文描述： N-channel + P-channel 3-phase motor drive
中文描述： 5 A, 60 V, 0.22 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SLA, SIP-12
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 31K
代理商： SLA5009
45
N-ch
P-ch
N-ch
N-ch
P-ch
P-ch
N-ch
P-ch
Re
(yfs)
-I
D
Characteristics (Typical)
Safe Operating Area (SOA)
Capacitance-V
DS
Characteristics (Typical)
I
DR
-V
SD
Characteristics (Typical)
P
T
-T
a
Characteristics
Characteristic curves
SLA5009
(T
a
=25
°
C)
N channel
P channel
Symbol
Specification
Unit
Conditions
Specification
Unit
Conditions
min
typ
max
min
typ
max
V
(BR)DSS
60
V
I
D
=250
μ
A, V
GS
=0V
V
GS
=
±
20V
–60
V
I
D
=–250
μ
A, V
GS
=0V
I
GSS
±
500
nA
500
nA
V
GS
= 20V
I
DSS
250
μ
A
V
V
DS
=60V, V
GS
=0V
–250
μ
A
V
V
DS
=–60V, V
GS
=0V
V
TH
2.0
4.0
V
DS
=10V, I
D
=250
μ
A
–2.0
–4.0
V
DS
=–10V, I
D
=–250
μ
A
Re
(yfs)
2.2
3.3
S
V
DS
=10V, I
D
=5A
1.6
2.2
S
V
DS
=–10V, I
D
=–4A
R
DS(ON)
0.17
0.22
pF
V
GS
=10V, I
D
=5A
0.38
0.55
pF
V
GS
=–10V, I
D
=–4A
Ciss
300
V
DS
=25V, f=1.0MHz,
270
V
DS
=–25V, f=1.0MHz,
Coss
160
pF
V
GS
=0V
170
pF
V
GS
=0V
t
on
35
ns
I
D
=5A, V
DD
30V, V
GS
=–10V,
60
ns
I
D
=–4A, V
DD
–30V, V
GS
=–10V,
t
off
35
ns
see Fig. 3 on page 16.
60
ns
see Fig. 4 on page 16.
V
SD
1.1
1.5
V
I
SD
=5A, V
GS
=0V
–4.4
–5.5
V
I
SD
=–4A, V
GS
=0V
t
rr
140
ns
I
SD
=
±
100mA
150
ns
I
SD
= 100mA
0.3
0.08
0.5
1
1
5
10
I
D
(A)
5
10
0.5
(V
DS
=10V)
25
°
C
125
°
C
T
C
=–40
°
C
0
10
20
30
40
50
10
100
1000
V
DS
(V)
C
500
50
GS
=0V
V
Ciss
Coss
Crss
0
0
1.0
1.5
2
8
10
D
V
SD
(V)
0.5
4
6
5V
10V
V
G
=V
0.5
0.1
1
5
10
50
100
0.5
1
5
10
20
I
D
V
DS
(V)
(T
C
=25
°
C)
I
D
(pulse) max
1m
10m (1ho)
R
DS ON
LMTED
100
μ
s
25
30
35
40
20
15
10
5
0
0
50
100
150
T
a
(
°
C)
P
T
With Silicone Grease
Natural Cooling
All Circuits Operating
WthIninteHeasn
Without Heatsink
0.3
–0.5
–1
1
5
I
D
(A)
–5
–8
0.5
–0.1
(V
DS
=–10V)
°
C
125
°
C
T
C
=–40
°
C
0
–10
–20
–30
–40
–50
50
100
700
V
DS
(V)
C
500
10
GS
=0V
V
Ciss
Coss
Crss
0
–3
–5
I
D
V
SD
(V)
–1
–8
–6
0
–4
–2
–2
–4
–5V
–0V
V
G
=V
–0.5
–0.1
–1
–5
V
DS
(V)
–10
–50 –100
–1
–5
–10
I
D
–0.5
(T
C
=25
°
C)
I
D
(pulse) max
1m
1m (so)
R
DS ON
IMTED
100
μ
s
Electrical characteristics
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