參數(shù)資料
型號： SLA5008
廠商： SANKEN ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel + P-channel H-bridge
中文描述： 4 A, 100 V, 0.6 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SLA, 12 PIN
文件頁數(shù)： 2/2頁
文件大小： 31K
代理商： SLA5008
43
N-ch
P-ch
N-ch
N-ch
P-ch
P-ch
N-ch
P-ch
Re
(yfs)
-I
D
Characteristics (Typical)
Safe Operating Area (SOA)
Capacitance-V
DS
Characteristics (Typical)
GS
=0V
V
I
DR
-V
SD
Characteristics (Typical)
P
T
-T
a
Characteristics
Characteristic curves
SLA5008
(T
a
=25
°
C)
N channel
P channel
Symbol
Specifications
Unit
Conditions
Specifications
Unit
Conditions
min
typ
max
min
typ
max
V
(BR)DSS
100
V
I
D
=250
μ
A, V
GS
=0V
V
GS
=
±
20V
–100
V
I
D
=–250
μ
A, V
GS
=0V
I
GSS
±
500
nA
500
nA
V
GS
= 20V
I
DSS
250
μ
A
V
V
DS
=100V, V
GS
=0V
–250
μ
A
V
V
DS
=–100V, V
GS
=0V
V
TH
2.0
4.0
V
DS
=10V, I
D
=250
μ
A
–2.0
–4.0
V
DS
=–10V, I
D
=–250
μ
A
Re
(yfs)
1.1
1.7
S
V
DS
=10V, I
D
=4A
0.7
1.1
S
V
DS
=–10V, I
D
=–3A
R
DS(ON)
0.50
0.60
pF
V
GS
=10V, I
D
=4A
1.1
1.3
pF
V
GS
=–10V, I
D
=–3A
Ciss
180
V
DS
=25V, f=1.0MHz,
180
V
DS
=–25V, f=1.0MHz,
Coss
82
pF
V
GS
=0V
85
pF
V
GS
=0V
t
on
40
ns
I
D
=4A, V
DD
50V, V
GS
=–10V,
90
ns
I
D
=–3A, V
DD
–50V, V
GS
=–10V,
t
off
40
ns
see Fig. 3 on page 16.
80
ns
see Fig. 4 on page 16.
V
SD
1.2
2.0
V
I
SD
=4A
–4.0
–5.5
V
I
SD
=–3A
t
rr
250
ns
I
SD
=
±
100mA
250
ns
I
SD
= 100mA
0.2
0.05
0.5
I
D
(A)
1
1
5
R
5
8
0.5
0.1
(V
DS
=10V)
25
°
C
125
°
C
T
C
=–40
°
C
0
10
20
30
40
50
10
50
100
600
V
DS
(V)
C
5
Ciss
Coss
Crss
00
1.0
1.5
2
7
8
D
V
SD
(V)
0.5
1
3
4
6
5
5V
10V
V
G
=V
0.5
0.1
1
5
V
DS
(V)
10
50
100
1
5
10
I
D
0.5
(T
C
=25
°
C)
I
D
(pulse) max
1m
1m (so)
R
DS ON
LMTED
10
μ
s
25
30
35
40
20
15
10
5
0
0
50
100
150
T
a
(
°
C)
P
T
With Silicone Grease
Natural Cooling
All Circuits Operating
WthIninteHeasn
Without Heatsink
0.2
–0.05
–0.5
I
D
(A)
–1
1
5
R
–6
0.5
–0.1
(V
DS
=–10V)
25
°
C
125
°
C
T
C
=–40
°
C
0
---10
---20
---30
---40
---50
50
100
700
V
DS
(V)
C
500
5
10
GS
=0V
V
Ciss
Coss
Crss
0
---3
I
D
V
SD
(V)
---1
---5
---0
---3
---1
---2
---4
---6
---4
---2
–5V
–10V
V
GS
=0V
---0.5
---0.1
---1
---5
V
DS
(V)
---10
---50
---100
---1
---5
---10
D
---0.5
(T
C
=25
°
C)
I
D
(pulse) max
1m
1m (so)
R
DS ON
IMTED
10
μ
s
Electrical characteristics
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