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參數(shù)資料
| 型號(hào)： | SLA0201 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 5A 600V 4 circuits Thyristor array |
| 中文描述： | 7.85 A, 600 V, SCR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 32K |
| 代理商： | SLA0201 |
I
Absolute Maximum Ratings
Parameter
I
Electrical Characteristics
Symbol
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
Ratings
600
600
650
650
5.0
7.8
80
2.0
10
5.0
5.0
0.5
–40 to +125
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°
C
°
C
Conditions
Tj=–40 to +125
°
C, R
GK
=1k
50Hz Half-cycle sinewave, Conduction angle 180
°
, Continuous current
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125
°
C
–40 to +125
V
V
mA
V
mA
V/
μ
S
W
Parameter
Symbol
Ratings
typ
min
max
2.0
100
Unit
Conditions
mA
μ
A
mA
μ
A
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
I
RRM
P
T
5.0
0.7
4.0
50
32
4
0.1
1.4
1.5
10
2.0
100
Tj=125
°
C,
V
D
=600V, R
GK
=1k
Tj=25
°
C,
V
D
=600V, R
GK
=1k
Tj=125
°
C,
V
D
=600V, R
GK
=1k
Tj=25
°
C,
V
D
=600V, R
GK
=1k
T
C
=25
°
C,
I
TM
=10A
V
D
=6V, R
L
=10
, T
C
=25
°
C
R
GK
=1k
, Tj=25
°
C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°
C,
R
GK
=
1k
, C
GK
=
0.033
μ
F
Without Heatsink, T
j
=25
°
C, All elements operation
With infinite Heatsink, T
j
=25
°
C, All elements operation
V
D
=1/2
×
V
DRM
, Tj=125
°
C,
R
GK
=1k
I
Features
G
5A 4 Thyristors combined one package
G
Repetitive peak off-state voltage: V
DRM
=600V
G
Average on-state current: I
T(AV)
=5A
G
Gate trigger current: I
GT
=10mA max
22
1 2 3 4 5 6 7 8 9 10 11 12
G K A G K A G K A G K A
31.5max
0.85
1.45
±
0.15
φ
3.2
±
0.15
31.0
±
0.2
24.4
±
0.2
16.4
±
0.2
3.2
±
0.15
×
3.8
11
P2.54
±
0.7
=27.94
±
0.1
0.55
2.2
0.7
Pin 1
12
8
9
±
0
1
±
0
1
±
0
2
9
(
0
1.2
±
0.15
+
0.2
–
0.1
+
0.2
–
0.1
4.8
±
0.2
1.7
±
0.1
Thy1
Thy2
Thy3
Thy4
1
2
3
4
5
6
7
8
9 10 11 12
a. Part Number
b. Lot Number
1, 4, 7, 10 : Gate (G)
2, 5, 8, 11 : Cathode (K)
3, 6, 9, 12 : Anode (A)
SLA0201
5A 600V 4 circuits Thyristor array
Weight: Approx. 6.1g
External Dimensions
(Unit: mm)
a
b
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Total power dissipation
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%
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