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參數(shù)資料
| 型號： | SL22-L |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 低VF肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SL22-L |
SL22-L THRU SL24-L
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
(V)
(V)
(V)
(V)
(
o
C)
SL22-L
SL22
20
14
20
0.38
SL23-L
SL23
20
14
20
0.40
SL24-L
SL24
40
28
40
0.40
SYMBOLS
MARKING
CODE
-55 to +125
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
I
O
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
50
A
V
R
= V
RRM
T
A
= 25
o
C
1.0
mA
V
R
= V
RRM
T
A
= 100
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
70
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
160
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Silicon epitaxial planer type
Formosa MS
Low VF Chip Schottky Barrier Diodes
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SL23-L | Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL24-L | Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL22-M | Surface Mount Jumper Link, tin/lead, Loose |
| SL23-M | Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL24-M | Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SL22M | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:2.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V |
| SL22-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL22-MH | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SL22S-WR05-0200(03) | 制造商:Hirose 功能描述: |
| SL22-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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