- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385846 > SKW10N60 (SIEMENS AG) Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) PDF資料下載
參數(shù)資料
| 型號： | SKW10N60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 296K |
| 代理商： | SKW10N60 |
SKP10N60
SKB10N60, SKW10N60
1
Mar-00
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SKP10N60
600V
10A
2.2V
150
°
C
TO-220AB
Q67040-S4217
SKB10N60
TO-263AB
Q67040-S4218
SKW10N60
TO-247AC
Q67040-S4241
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
V
CE
I
C
600
V
A
21
10.9
I
Cpuls
-
42
42
I
F
21
10
I
Fpuls
V
GE
t
SC
42
±
20
10
V
μ
s
P
tot
104
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| skb15n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKP15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKW15N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skw20n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| skw30n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW10N60A | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SK-W11-21C-1/2 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-21C-1/2 - Bulk |
| SK-W11-21C-3/4 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-21C-3/4 - Bulk |
| SK-W11-21C-5/8 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-21C-5/8 - Bulk |
| SK-W11-22C-1/2 | 制造商:ITT Interconnect Solutions 功能描述:SK-W11-22C-1/2 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。
