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參數(shù)資料
| 型號： | SKN71/08UNF |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 整流器 |
| 英文描述： | 95 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封裝： | HERMETIC SEALED, METAL, CASE E11, DO-5, 1 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 255K |
| 代理商： | SKN71/08UNF |
by SEMIKRON
010531
B 8 – 17
I:\M
ark
e
tin\
F
R
A
M
E
D
A
T
\d
atbl\
B
0
8
-Diode
n\sk
n_r
45_
70
_71
.fm
VRSM
IFRMS (maximum values for continuous operations)
VRRM
80 A
150 A
IFAV (sin. 180; Tcase = ...)
50 A (118 °C)
95 A (100 °C)
V
400
800
1200
1400
1600
SKN 45/04
SKN 45/08
SKN 45/12
SKN 45/14
SKN 45/16
SKR 45/04
SKR 45/08
SKR 45/12
SKR 45/14
SKR 45/16
SKN 70/04
SKN 70/08
SKN 70/12
SKN 70/14
SKN 70/16
SKR 70/04
SKR 70/08
SKR 70/12
SKR 70/14
SKR 70/16
SKN 71/04*
SKN 71/08*
SKN 71/12*
SKN 71/14*
SKN 71/16*
SKR 71/04*
SKR 71/08*
SKR 71/12*
SKR 71/14*
SKR 71/16*
Symbol Conditions
SKN 45
SKR 45
SKN 70
SKR 70
SKN 71
SKR 71
Units
IFAV
sin. 180; Tcase = 100 °C
= 118 °C
= 125 °C
–
50
45
95
–
70
A
IFSM
i2t
Tvj = 25 °C; 10 ms
Tvj = 180 °C; 10 ms
Tvj = 25 °C; 8,3 ... 10 ms
Tvj = 180 °C; 8,3 ... 10 ms
700
600
2500
1800
1150
1000
6600
5000
A
A2s
Qrr
Tvj = 160 °C; – diF/dt = 10 A/s
typ. 70
C
IR
Tvj = 25 °C; VR = VRRM
Tvj = 180 °C; VR = VRRM
0,6
10
0,6
10
mA
VF
V(TO)
rT
Tvj = 25 °C;
(IF = ...); max.
Tvj = 180 °C
1,6
(150)
0,85
5
1,5
(200)
0,85
3
V
(A)
V
m
Rthjc
Rthch
0,85
0,25
0,55
0,2
°C/W
Tvj
– 40 ... + 180
°C
Tstg
– 55 ... + 180
°C
M
a
M8
SI units
US units
1/4-28 UNF 2A
SI units
US units
4
35
2,5
22
5 . 9,81
30
Nm
lb.in.
Nm
lb.in.
m/s2
w
approx.
g
RC
Rp
(PR = ...)
PR = 6 W
0,1 (1 W)
100
80
0,1 (2 W)
100
80
F
k
Case
E 12
E 11
Rectifier Diodes
SKN 45
SKR 45
SKN 70
SKR 70
SKN 71
SKR 71
Features
Reverse voltages up to 1600 V
Hermetic metal cases with glass
insulators
Threaded studs ISO M8
(SKN/R 71 also 1/4 – 28 UNF)
SKN: anode to stud
SKR: cathode to stud
Typical Applications
All-purpose mean power rectifier
diodes
Cooling via heatsinks
Non-controllable and
half-controllable rectifiers
Free-wheeling diodes
* available with UNF thread
1/4–28 UNF 2 A;
e.g. SKN 71/12 UNF
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or
implied is made regarding delivery, performance or suitability.
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