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參數(shù)資料
| 型號(hào)： | SKCD81C120I |
| 廠(chǎng)商： | SEMIKRON INTERNATIONAL |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1200 V, SILICON, RECTIFIER DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | SKCD81C120I |
by SEMIKRON
B 15 – 31
0896
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
Units
VRRM
1200
V
IFSM
(
≥ 10 bondwires 300 m )
tp = 10 ms; sin; Tj = 150
°C900
A
I
2
t
tp = 10 ms; sin; Tj = 150
°C
4000
A
2s
Tsolder
max. 120 s (transfer)
375
°C
Tvj, Tstg
min
– 55
°C
Tvj,Tstg
max
+ 150
°C
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
IRM
Tj = 25
°C/125 °C; VRRM
0,3 / 8
mA
VF
IF = 100 A;
Tj = 25
°C
2,0
2,5
V
Tj = 125
°C
1,8
2,3
V
VF
IF = 150 A;
Tj = 25
°C
2,25
V
Tj = 125
°C
2,05
V
VT(TO)
Tj = 125
°C, see Fig. 1
1,0
1,2
V
rT
Tj = 125
°C8
11
m
IRRM
IF = 100 A;
2)
Tj = 125
°C65
A
Qrr
IF = 100 A;
Tj = 25
°C4
C
2)
Tj = 125
°C15
C
Tsolder
10 min
250
°C
Tsolder
5 min
320
°C
Mechanical Data
Atot
total area
81
mm
2
Aact.
active area
61
mm
2
w
weight
66
mg
Supplied on chip carriers (36 units) 102 x 102 x 8 mm
or supplied on frame, on request
Please contact factory
1)
Tcase = 25
°C, unless otherwise specified
2)
VR = 600 V; – diF/dt = 1000 A/
s;
3)
CAL = Controlled Axial Lifetime Technology
4)
Soldered on DCB ceramic (Al2O3) 0,4 mm thick
on a 3 mm copper base plate Rthjc = 0,36 K/W
Tjm = 150
°C; Tcase = 80 °C.
SEMICELL
CAL - Diode Chips
3)
SKCD 81C 120 I
9 x 9 mm; 90 A
4); 1200 V
Features
Low voltage drop
low temperature dependence
Very soft reverse recovery
under all conditions
CAL = Controlled Axial
Lifetime Technology
Top side = Al for bonding
by aluminum wire
Bottom = 4 layer metallisation
for soldering
Typical Applications
Inverse diode for IGBT
(in inverter drives)
Freewheeling diode in brake
choppers or step-up choppers
with IGBT or MOSFET
UPS Uninteruptible Power
Supplies
Hybrid circuits for static power
converters
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相關(guān)代理商/技術(shù)參數(shù) |
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| SKCD81C120I3 | 制造商:SEMIKRON 制造商全稱(chēng):Semikron International 功能描述:CAL-DIODE |
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