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參數(shù)資料
| 型號(hào)： | SKCD29C120I4 |
| 廠商： | SEMIKRON INTERNATIONAL |
| 元件分類： | 整流器 |
| 英文描述： | 31 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | 5.39 X 5.39 MM, DIE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 191K |
| 代理商： | SKCD29C120I4 |
SKCD 29 C 120 I4
by SEMIKRON
Rev. 1 – 19.02.2010
1
CAL-DIODE
SKCD
IF = 50 A
VRRM = 1200 V
Size: 5,39 mm x 5,39 mm
SKCD 29 C 120 I4
Features
max. junction 175 °C
very low forward voltage drop
positive temperature coefficient
extreme soft recovery
Typical Applications*
freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
VRRM
Tj =25°C, IR =0.06mA
1200
V
IF(AV)
Tc =80°C, Tj = 175 °C, Fi=PI/2
31
A
IFSM
10 ms
sin 180°
Tj =25°C
270
A
Tj = 150 °C
270
A
Tjmax
175
°C
Electrical Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
i2t
Tj = 150 °C, sin 180°, 10 ms
365
A2s
IR
Tj =25°C, VRRM = 1200 V
0.06
mA
Tj = 150 °C, VRRM =1200V
4.40
8.80
mA
VF
Tj =25°C, IF =50A
2.22
2.54
V
Tj = 150 °C, IF =50A
2.18
2.50
V
Tj = 175 °C, IF =50A
2.03
2.34
V
V(TO)
Tj = 150 °C
0.90
1.10
V
rT
Tj = 150 °C
25.6
27.90
m
V(TO)
Tj = 175 °C
0.82
0.98
V
rT
Tj = 175 °C
24.20
27.30
m
Dynamic Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
trr
Tj = 150 °C, 50 A, 600 V, 1000 A/s
0.53
s
Err
Tj = 150 °C, 50 A, 600 V, 1000 A/s
2.6
mJ
Irrm
Tj = 150 °C, 50 A, 600 V, 1000 A/s
46
A
Thermal Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj
-40
175
°C
Tstg
-40
175
°C
Tsolder
10 min.
250
°C
Tsolder
5 min.
320
°C
Rth(j-c)
Semitrans Assembly
1.00
K/W
Mechanical Characteristics
Symbol
Conditions
Values
Unit
Raster
size
5.39 x 5.39
mm2
Area total
29
mm2
Anode
Metallization
bondable (Al)
Cathode
Metallization
solderable (Ag/Ni)
Wire bond
Al, typ. diameter = 300 m
Package
wafer frame
Chips /
Package
510
pcs
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