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參數(shù)資料
| 型號(hào)： | SK52-B |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | SK52-B |
SK52-B THRU SK510-B
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
(V)
(V)
(V)
(V)
(
o
C)
SK52-B
SS52
20
14
20
SK53-B
SS53
30
21
30
SK54-B
SS54
40
28
40
SK55-B
SS55
50
35
50
SK56-B
SS56
60
42
60
SK58-B
SS58
80
56
80
SK510-B
S510
100
70
100
-55 to +150
0.70
0.85
Operating
temperature
V
F
*4
SYMBOLS
MARKING
CODE
0.50
-55 to +125
V
RRM
*1
V
RMS
*2
V
R
*3
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
5.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
150
A
V
R
= V
RRM
T
A
= 25
o
C
1
mA
V
R
= V
RRM
T
A
= 125
o
C
50
mA
Thermal resistance
Junction to lead
R
q
JL
12
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
380
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.173(4.4)
0.157(4.0)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SK54-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SK58-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SK55-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| SK56-B | FERRITE TUBULAR BEAD 13.77MM |
| SK53-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SK52B R4 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 20V 5A 2-Pin SMB T/R |
| SK52B_1 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:5.0 AMPS. Surface Mount Schottky Barrier Rectifiers |
| SK52B_11 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:5.0AMPS Surface Mount Schottky Barrier Rectifiers |
| SK52B_13 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:5.0AMPS Surface Mount Schottky Barrier Rectifiers |
| SK52B-L | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:5 Amp Schottky Rectifier 20 to 100 Volts |
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