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參數(shù)資料
| 型號(hào)： | SK1080D2 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Rectifiers - Single Diode |
| 中文描述： | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | SK1080D2 |
SK1020D2 ... SK10100D2
SK1020D2 ... SK10100D2
Surface Mount Schottky Rectifiers – Single Diode
Schottky-Gleichrichter für die Oberflchenmontage – Einzeldiode
Version 2006-04-06
Dimensions - Mae [mm]
Nominal Current
Nennstrom
10 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case
Kunststoffgehuse
TO-263AB
D2PAK
1
)
Weight approx.
Gewicht ca.
1.6 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
Forward Voltage
Durchlass-Spannung
V
F
[V]
2
)
I
F
= 5 A
I
F
= 10 A
SK1020D2
20
20
< 0.51
< 0.55
SK1030D2
30
30
< 0.51
< 0.55
SK1040D2
40
40
< 0.51
< 0.55
SK1045D2
45
45
< 0.51
< 0.55
SK1050D2
50
50
< 0.57
< 0.65
SK1060D2
60
60
< 0.57
< 0.65
SK1080D2
80
80
< 0.71
< 0.83
SK10100D2
100
100
< 0.71
< 0.83
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
C
= 100°C
I
FAV
10 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
30 A
3
)
Peak forward surge current,
50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
SK1020D2...
SK1060D2
T
A
= 25°C
I
FSM
135/150 A
SK1080D2...
SK10100D2
T
A
= 25°C
I
FSM
115/125 A
Rating for fusing – Grenzlastintegral, t < 10 ms
T
A
= 25°C
i
2
t
80 A
2
s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
-50...+150°C
-50...+175°C
1
Special type available in ultrathin package (1.4 mm), see datasheet L118
Sonderversion erhltlich im ultraflachen Gehuse (1,4 mm), siehe Datenblatt L118
T
j
= 25°C
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehuses T
C
= 100°C
2
3
Diotec Semiconductor AG
http://www.diotec.com/
1
0.4
4.5
0.2
±
0.4
5.08
0.8
1.3
10.25
4
-0.1
1
Type
Typ
3
2
1
2
3
4
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