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參數(shù)資料
| 型號(hào)： | SJPB-D9 |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE |
| 封裝： | SJP, 2 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | SJPB-D9 |
FMX-2203
SFPL-64
81
25
50
75
100
125
VR=300V
VR=400V
150
0
10
5
15
20
Case Temperature Tc (
°C)
Case Temperature Tc (
°C)
Case Temperature Tc (
°C)
Reverse Voltage
VR (V)
050
Reverse
Current
I
R
(A)
300
100
150
200
250
0.001
0.01
0.1
1
0.0001
0.00001
100
10
1
0.01
0.1
0.001
0.3
0.6
0.9
1.2
Forward Voltage VF (V)
Forward
Current
I
F
(A)
0
1.5
Ta=150
°C
100
°C
60
°C
25
°C
VF —IF Characteristics (Typical)
VR—IR Characteristics (Typical)
Average
Forward
Current
I
F
(AV)
(A)
Average
Forward
Current
I
F
(AV)
(A)
Tc— IF (AV) Derating
T
t
Tj=150
°C
Ta=150
°C
100
°C
60
°C
25
°C
t/ T =1/2
D.C.
t / T =1/3
t / T =1/6
Sinewave
t / T = 1/ 3, Sinewave
t/ T
=1/2
D.C.
t/ T
=1/6
0
0.2
0.6
0.8
0.4
1.0
0
0.4
0.8
1.2
0.2
0.6
1.0
1.6
2.0
1.4
1.8
Forward
Power
Loss
P
F
(W)
Average Forward Current IF(AV) (A)
IF(AV)—PF Characteristics
T
t
Tj=150
°C
0
200
100
300
400
0
0.020
0.015
0.010
0.005
Reverse
Power
Loss
P
R
(W)
Average
Forward
Current
I
F
(AV)
(A)
Forward
Power
Loss
P
F
(W)
Reverse
Power
Loss
P
R
(W)
Average
Forward
Current
I
F
(AV)
(A)
Forward
Power
Loss
P
F
(W)
Reverse
Power
Loss
P
R
(W)
Reverse Voltage
VR (V)
Average Forward Current IF(AV) (A)
Reverse Voltage
VR (V)
Average Forward Current IF(AV) (A)
Reverse Voltage
VR (V)
VR—PR Characteristics
IF(AV)—PF Characteristics
VR—PR Characteristics
IF(AV)—PF Characteristics
VR—PR Characteristics
T
t
Tj=150
°C
Sinewave
1– t / T
=5/6
1– t / T
=2/3
1– t / T
=1/2
100
110
120
140
130
150
0
0.2
0.4
0.6
0.8
1.0
T
t
Tj =150C
t/ T
=1/2
D.C.
t/ T
=1/3
t/ T
=1/6
Sinewave
Characteristic Curves
Ultra-Fast-Recovery Rectifier Diodes
T — IF(AV) Characteristics
Lead Temperature T (
°C)
MPX-2103
FMW-2204
50
70
90
110
130
VR=300V
150
0
4
2
6
8
10
T
t
Tj =150C
t/ T =1/2
D.C.
t / T =1/3
t / T =1/6
Sinewave
t/ T
= 1/ 3, Sinewave
t/ T
=1/2
D.C.
t/ T
=1/6
02
6
8
410
0
4
8
12
2
6
10
16
20
14
18
Tj =150C
T
t
Tj =150C
0
250
150
100
50
200
300
0
10
8
6
4
2
T
t
Tj =150C
Sinewave
1– t / T
=5/6
1– t / T
=2/3
1– t / T
=1/2
0
50
100
VR=40V
150
0
5
10
15
20
T
t
Tj =150C
t/ T =1/2
D.C.
t / T =1/3
t / T =1/6
Sinewave
t/ T
= 1/ 3, Sinewave
t/ T
=1/2
D.C.
t/ T
=1/6
020
30
10
40
0
20
30
10
40
0
5
10
15
20
25
Tj =150C
T
t
Tj =150C
0
25
20
15
10
5
T
t
Tj =150C
Sinewave
1– t / T
=5/6
1– t / T
=2/3
1– t / T
=1/2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SJPB-D9V | 制造商:Sanken Electric Co Ltd 功能描述:DIODE SCHOTTKY 90V 1A SJP |
| SJPB-D9VR | 制造商:Sanken Electric Co Ltd 功能描述: |
| SJPB-H4 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Rectifier |
| SJPB-H4VR | 制造商:Sanken Electric Co Ltd 功能描述: |
| SJPB-H6 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Rectifier |
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