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參數(shù)資料
| 型號： | SJ5809US |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, MELF-B-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 37K |
| 代理商： | SJ5809US |
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 127, REV.H.2
HERMETIC AXIAL / MELF HIGH EFFICIENCY RECTIFIER
Hermetic, non-cavity glass package
Metallurgically bonded
Physical dimensions: Axial lead similar to E package and surface mount similar to D-5B
Operating and Storage Temperature: -65oC to +175o
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25
oC unless otherwise specified.
SJ
SX
SV
1N5807 / US
1N5809 / US
1N5811 / US
Rating
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1N5807 / US
1N5809 / US
1N5811 / US
VWM
50
100
150
Volts
AVERAGE RECTIFIED FORWARD CURRENT
Io
TL= 75
oC
6.0
Amps
AVERAGE RECTIFIED FORWARD CURRENT
Io
TA= 55
oC
3.0
Amps
PEAK FORWARD SURGE CURRENT
IFSM
Tp=8.3ms
125
A(pk)
MAXIMUM REVERSE CURRENT
IR @ VRWM
Tj = 25
oC
5.0
μAmps
MAXIMUM REVERSE CURRENT
IR @ VRWM
Tj = 125
oC
525
μAmps
MAX. PEAK FORWARD VOLTAGE (PULSED)
300
μsec pulse, duty cycle < 2%
VFM
IFM=4.0A
IFM=6.0A
0.875
0.925
Volts
MAXIMUM REVERSE RECOVERY TIME
Trr
IF=IRM=0.5A
IREC=0.05A
30
ns
FORWARD RECOVERY VOLTAGE
VFRM
IF=500mA
tr=8ns
2.2
Volts
THERMAL RESISTANCE (Axial)
1N5807 thru 1N5811
R
θ
JL
L=.375
22
oC/W
THERMAL RESISTANCE (MELF)
1N5807US thru 1N5811US
R
θ
JC
L=0
6.5
oC/W
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| SV5811US | 3 A, SILICON, RECTIFIER DIODE |
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