參數(shù)資料
型號: SIPC49S2N08
廠商: SIEMENS AG
英文描述: N-channel Enhancement Mode SIPMOS Chip(N溝道增強(qiáng)型SIPMOS芯片)
中文描述: N溝道增強(qiáng)模式SIPMOS芯片(不適用溝道增強(qiáng)型SIPMOS芯片)
文件頁數(shù): 1/4頁
文件大?。?/td> 49K
代理商: SIPC49S2N08
Infineon AG i Gr., PS TM1,
Informations # -
1999-09-01
1
SIPC49S2N08
Target data sheet
SIPMOS
Chip datasheet
This Chip Datasheet refers to the Device Data sheet
- /
-
Features
N-Channel
Enhancement mode
Avalanche rated
175°C operating temperature
V
DS
R
DS(on)
Die size
Thickness
V
75
4
m
mm
2
μm
6.5 x 7.5
170
Ordering Code
unsawn wafer on foil
sawn wafer on foil
-
-
DESCRIPTION
Assembly by epoxy die bonding or soldering
AQL 1.5 for visual inspection according to failure catalog A67207-A7001-A001 issue C
on 100% measured wafer
Electrostatic Discharge Sensitive Device according to MIL-STD 883 C
Storage of chips and wafer according technical guideline 14 Doc. No. A66003-R14-T1-B-35
Maximum Ratings,
at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
F)
T
C
= 25 °C
Avalanche energy, single pulse
ID = 100 A,
V
DD
= 25 V,
R
GS
= 25
Gate source voltage
Operating and storage temperature
Symbol
I
D
Value
240
Unit
A
mJ
E
AS
4000
V
GS
T
j ,
T
stg
±20
V
°C
-55... +175
1Current calculated for R
thJC
= 0.27 K/W
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