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參數(shù)資料
| 型號(hào)： | SIP41109 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| 中文描述： | 用于直流／直流轉(zhuǎn)換的半橋N溝道MOSFET驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大小： | 101K |
| 代理商： | SIP41109 |
SiP41109/41110
Vishay Siliconix
New Product
www.vishay.com
6
Document Number: 73023
S-51104—Rev. A, 13-Jun-05
where Q
GATE
is the gate charge needed to turn on the
high-side MOSFET and V
BOOT
PHASE is the amount of
droop allowed in the bootstrapped supply voltage when the
high-side MOSFET is driven high. The bootstrap capacitor
value is typically 0.1 F to 1 F. The bootstrap capacitor
voltage rating must be greater than V
CC
+ 12 V to withstand
transient spikes and ringing.
Shoot-Through Protection
The external MOSFETs are prevented from conducting at the
same time during transitions. Break-before-make circuits
monitor the voltages on the PHASE pin and the LGATE pin and
control the switching as follows: When the signal on PWM goes
low, UGATE will go low after an internal propagation delay.
After the voltage on PHASE falls below 2.5 V by the inductor
action, the low-side driver is enabled and LGATE goes high
after some delay. When the signal on PWM goes high, LGATE
will go low after an internal propagation delay. After the voltage
on LGATE drops below 2.5 V the high-side driver is enabled
and UGATE will go high after an internal propagation delay. If
PHASE does not drop below 2.5 V within 380 ns after UGATE
goes low, LGATE is forced high until the next PWM transition.
V
CC
Bypass Capacitor
MOSFET drivers draw large peak currents from the supplies
when they switch. A local bypass capacitor is required to
supply this current and reduce power supply noise. Connect
a 1- F ceramic capacitor as close as practical between the
V
CC
and GND pins.
Undervoltage Lockout
Undervoltage lockout prevents control of the circuit until the
supply voltages reach valid operating levels. The UVLO circuit
forces LGATE and UGATE to low when V
CC
is below its
specified voltage. A separate UVLO forces UGATE low when
the voltage between BOOT and PHASE is below the specified
voltage.
Thermal Protection
If the die temperature rises above 165 C, the thermal
protection disables the drivers. The drivers are re-enabled
after the die temperature has decreased below 140 C.
TYPICAL CHARACTERISTICS
5
15
25
35
45
55
65
75
85
95
105
0
1
2
3
4
5
I
CC
vs. C
LOAD
vs. Frequency (SiP41109)
C
LOAD
(nF)
1 MHz
I
C
500 kHz
200 kHz
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
I
CC
vs. C
LOAD
vs. Frequency (SiP41110)
C
LOAD
(nF)
1 MHz
I
C
500 kHz
200 kHz
V
CC
= 12 V
V
CC
= 12 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SIP41109DB | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41109DY-T1-E3 | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41110DB | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41110DY-T1-E3 | Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41110 | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0550-2 00; No. of Positions: 10; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Double row; Crimping |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIP41109DB | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41109DY-T1-E3 | 功能描述:功率驅(qū)動(dòng)器IC H-Bridge N-Ch MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| SIP41110 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41110DB | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion |
| SIP41110DY-T1-E3 | 功能描述:功率驅(qū)動(dòng)器IC H-Bridge N-Ch MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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