參數(shù)資料
型號: SIM-040ST
元件分類: 紅外LED
英文描述: 1 ELEMENT, INFRARED LED, 870 nm
封裝: SURFACE MOUNT PACKAGE-2
文件頁數(shù): 1/3頁
文件大小: 55K
代理商: SIM-040ST
SIM-040ST
Applications
Light source for sensors
(proximity sensors,
signal transmission applications)
Features
1) Higt compact, low-profile
2) Higt output, over a narrow angle
3) Exellent temperature property
4) Long life,high reliability
5) Original optical tecnology is
ultra-high-output surface mount
infrared LEDs.
Absolute maximum ratings (Ta
=25°C)
Electrical and optical characteristics (Ta
=25°C)
Electrical and optical characteristics curves
Surface Mount High Output Infrared LEDs
Fig.4 Relative radiant vs.
Ambient temperature
-25
0
25
50
75
100
RELATIVE
RADIANT
INTENSITY
AMBIENT TEMPERATURE : Ta (
°C)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF
=100mA
Fig.3 Radiant intensity vs.
Forward current
RADIANT
INTENSITY
:
I
E
(mW
/
sr)
FORWARD CURRENT : IF (
mA)
0
100
150
50
200
100
120
60
40
80
20
0
Fig.1 Forward current fall off
FORWARD
CURRENT
:
I
F
(mA)
AMBIENT TEMPERATURE : Ta (
°C)
0
20
40
60
80
100
120
-25
0
25
50
75
100
Fig.2 Forward current vs.
Forward voltage
0
0.5
1
1.5
2
2.5
3
1
10
100
1000
25°C
0
°C
25
°C
60
°C
85
°C
FORWARD VOLTAGE : VF (V)
FORWARD
CURRENT
:
I
F
(mA)
Fig.5 Spectrum date
OPTICAL WAVELENGTH :
λp (nm)
RERATIVE
SENSITIVITY
0.0
0.2
0.4
0.6
0.8
1.0
700
750
800
850
900
950 1000 1050
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
View angle
Radiant intensity
Parameter
Non-coherent infrared light emiting diode used.
This product is not designed to be protected against electromagnetic wave.
Symbol
IE
VF
IR
θ1/2
Min.
Typ.
20
100
1.7
±20
Max.
2.5
15
Unit
mW/sr IF
=100mA
IF
=100mA
VR
=5V
μA
870
IF
=100mA
nm
deg.
V
Conditions
λpeak
35
IF
=100mA
nm
Δ
λ
Fig.6 Radiant intensity
RERATIVE
RADIANT
INTENSITY
60
90
0
30
60
90
0.9
1
0.7
0.8
0.5
0.6
0.4
0.2
0.3
0.1
0
ANGLE : deg
IF
=100mA
Forward current
Pulse forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Parameter
Symbol
Limits
Unit
IF
100
mA
VR
5V
PD
180
mW
Tstg
40
85
°C
Topr
25 to
to
85
°C
IFP
1A
*1
*1 Pulse width 0.1msec,duty ratio1%
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