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參數(shù)資料
| 型號(hào)： | SIGC128T170R3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT3 Chip |
| 中文描述： | IGBT3芯片 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 78K |
| 代理商： | SIGC128T170R3 |
SIGC128T170R3
Edited by INFINEON Technologies AI PS DD HV3, L 7781-A, Edition 2, 04.09.03
IGBT
3
Chip
FEATURES:
1700V Trench + Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4189-A001
SIGC128T170R3
1700V 100A 11.33 x 11.33 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
11.33 x 11.33
Emitter pad size
8 x ( 4.48 x 2.15 )
Gate pad size
1.18 x 1.09
mm
Area total / active
128.4 / 99.9
mm
2
Thickness
190
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
104 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm AlSiCu
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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| SIGC12T120L | IGBT3 Chip |
| SIGC12T120 | IGBT Chip |
| SIGC12T60NC | IGBT Chip in NPT-technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC12T120 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip |
| SIGC12T120L | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC12T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC12T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient |
| SIGC144T170R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 1700V NPT technology 280 μm chip |
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