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參數(shù)資料
| 型號： | SIGC104T170R2C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SIGC104T170R2C |
SIGC104T170R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7351M, Edition 2, 04.09.2003
IGBT Chip in NPT-technology
FEATURES:
1700V NPT technology
280μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
chip only
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-A4695-
A001
SIGC104T170R2C
1700V
50A
10.12 x 10.18 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
10.12 x 10.18
Area total / active
103 / 71.5
Emitter pad size
8x( 1.78x2.58 )
Gate pad size
0.757 x 1.48
mm
2
Thickness
280
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
130 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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