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參數(shù)資料
| 型號： | SID1K10CXM |
| 元件分類： | 紅外LED |
| 英文描述： | 5 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 87K |
| 代理商： | SID1K10CXM |
72
5-3
Infrared LEDs
No. 44
No. 45
No. 46
No. 47
External Dimensions (unit: mm)
(General tolerance:
±0.3)
sAbsolute Maximum Ratings
Parameter
IF
IFP
VR
Top
Tstg
Ratings
100
–1.33
1000
5
–30~+85
–30~+100
Unit
mA
mA/C
mA
V
C
Conditions
Above 25C
f=1kHz, tw
≤10
s
5.6±0.2
23.0min
1.0min
A
Cathode
0.65max
Resin heap 1.5max
Resin burr 0.3max
5.0
±0.2
0.5±
0.1
0.5
±0.1
(1.0)
(2.54)
0.5
±0.1
0.5±
0.1
Anode
Cathode
1.0min
21.0min
9.4±
0.3
5.0
±0.2
Resin heap 0.8max
Resin burr 0.3max
0.65
max
0.5
±0.1
0.5
±0.1
(2.54)
5.6
24.0min
8.5±
0.5
Anode
(2.54)
0.6
±0.1
1.1max
0.85
+0.1
Resin heap 1.5max
0.6±
0.1
0.6
±0.1
Resin burr 0.3max
4.8
±0.2
Cathode
2.0min
(0.8)
A
1.7
3.8
0.4
1.0min
25.8min
3.5±
0.1
(1.3)
0.45
±0.1
0.65max
Resin burr 0.3max
Resin heap 1.5max
3.1
±0.1
Cathode
(2.54)
0.4
±0.1
(unit: mm)
1.3
1.5
1.3
1.5
1.8
1.5
Clear
130
200
60
110
250
80
130
180
200
50
7.0
14
940
850
940
×
×
44
45
46
47
(Constant voltage)
VCC=3V,
R=2.2
IF=50mA
SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
SID1050CM
SID303C
SID313BP
SID1003BQ
SID307BR
SID1G307C
SID2010C
SID2K10C
GaAs
GaAlAs
GaAs
5φ
round
type
SID 303C
SID 313BP
SID 1003BQ
SID 307BR
SID1G307C
Dimension A
3.0
±0.5
3.6
±0.5
4.2
±0.5
Emitting
Color
Part No.
Optical Power Ie
(mW/sr)
Conditions
typ
Chip
Material
PeakWave-
length
λP
(mm)
typ
Forward
Voltage VF
IF=10mA
(V)
typ
max
Direct
Mount
Fig.
No.
Shape
Electro-Optical Characteristics (Ta=25C)
3φ
round
type
Transparent
light purple
Transparent
light navy blue
Transparent
dark navy blue
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PDF描述 |
|---|---|
| SID307BR | 4.8 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| SID1010CXM | 5 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| SID1F10CM | 5 mm, 1 ELEMENT, INFRARED LED, 850 nm |
| SID303BS | 4.8 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| SID313BP | 4.8 mm, 1 ELEMENT, INFRARED LED, 940 nm |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SID200N12 | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:絕緣柵雙極型晶體管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),NPT技術的IGBT模塊NPT IGBT Modules (None Punch Through Technology). |
| SID200S12 | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述:絕緣柵雙極型晶體管（IGBT）Isolated Gate Bipolar Transistor (IGBTs)，SPT技術的IGBT模塊SPT IGBT Modules (Soft Punch Through Technology)。 |
| SID2010 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:3phi Round Infrared LED |
| SID2010_08 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:3phi Round Infrared LEDs |
| SID2010C | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:3phi Round Infrared LEDs |
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