- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372145 > SI9956DY (NXP SEMICONDUCTORS) N-channel enhancement mode field-effect transistor PDF資料下載
參數(shù)資料
| 型號： | SI9956DY |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 253K |
| 代理商： | SI9956DY |
Philips Semiconductors
Si9956DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 July 2001
2 of 13
9397 750 08414
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 150
°
C
T
amb
= 25
°
C; pulsed; t
p
≤
10 s
T
amb
= 25
°
C; pulsed; t
p
≤
10 s
Typ
55
70
Max
20
3.5
2
150
100
200
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 2.2 A
V
GS
= 4.5 V; I
D
= 1 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 150
°
C
Min
55
55
Max
20
±
20
3.5
2.8
14
2
1.3
+150
+150
Unit
V
V
A
A
A
W
W
°
C
°
C
T
amb
= 25
°
C; pulsed; t
p
≤
10 s;
Figure 2
and
3
T
amb
= 70
°
C; pulsed; t
p
≤
10 s;
Figure 2
T
amb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
amb
= 25
°
C; pulsed; t
p
≤
10 s;
Figure 1
T
amb
= 70
°
C; pulsed; t
p
≤
10 s;
Figure 1
I
DM
P
tot
peak drain current
total power dissipation
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
storage temperature
operating junction temperature
T
amb
= 25
°
C
1.3
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SIDAC | silicon bilateral voltage triggered switch |
| SIM-080CYU | LED DOT MATRIX MODULE |
| SIM-128CAH | LED DOT MATRIX MODULE |
| SIM-128CAN | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0010-5 00; No. of Positions: 11; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping |
| SIM-128CFN | LED DOT MATRIX MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9956DYT1 | 制造商:SILICONIX 功能描述:* |
| SI9956DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC N T/R |
| SI9958DY | 功能描述:MOSFET 20V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9958DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 20V 3.5A 8-Pin SOIC N T/R |
| SI9959DY | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, Matched Pair, N-Channel, SO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。