參數(shù)資料
型號： SI9955DY
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel Enhancement Mode MOSFET
中文描述： 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁數(shù)： 1/3頁
文件大?。?/td> 246K
代理商： SI9955DY
S
Si9955DY Rev. A
Si9955DY*
Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Battery switch
Load switch
Motor controls
June 1999
Features
3.0 A, 50 V. R
DS(ON)
= 0.130
@ V
GS
= 10 V
R
DS(ON)
= 0.200
@ V
GS
= 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
$EVROXWH0D[LPXP5DWLQJV
7
$
&XQOHVVRWKHUZLVHQRWHG
6\PERO
3DUDPHWHU
5DWLQJV
8QLWV
9
'66
'UDLQ6RXUFH9ROWDJH
9
9
*66
*DWH6RXUFH9ROWDJH
±
9
,
'
'UDLQ&XUUHQW
&RQWLQXRXV
1RWHD
$
3XOVHG
3
'
3RZHU'LVVLSDWLRQIRU6LQJOH2SHUDWLRQ
:
3RZHU'LVVLSDWLRQIRU6LQJOH2SHUDWLRQ
1RWHD
1RWHE
1RWHF
7
-
7
67*
2SHUDWLQJDQG6WRUDJH-XQFWLRQ7HPSHUDWXUH5DQJH
WR
°
&
7KHUPDO&KDUDFWHULVWLFV
5
θ
-$
7KHUPDO5HVLVWDQFH-XQFWLRQWR$PELHQW
5
θ
-&
7KHUPDO5HVLVWDQFH-XQFWLRQWR&DVH
°
&:
°
&:
1RWH
3DFNDJH2XWOLQHVDQG2UGHULQJ,QIRUPDWLRQ
'HYLFH0DUNLQJ
6,'<
'HYLFH
5HHO6L]H
7DSH:LGWK
4XDQWLW\
PP
XQLWV
'LH DQG PDQXIDFWXULQJ VRXUFH VXEMHFW WR FKDQJH ZLWKRXWS ULRU QRWLILFDWLRQ
'
62
'
'
'
6
6
*
*
相關PDF資料
PDF描述
SK100DA120D NPN POWER DARLUNGTON MODULES 100A 1200V
SK100DAL100D NPN POWER DARLUNGTON MODULES 100A 1000V
SK100DB100D NPN POWER DARLUNGTON MODULES 100A 1000V
SK100DAL120D NPN POWER DARLUNGTON MODULES 100A 1200V
SK100DB120D NPN POWER DARLUNGTON MODULES 100A 1200V
相關代理商/技術參數(shù)
參數(shù)描述
SI9956DY 功能描述:MOSFET 20V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI9956DYT1 制造商:SILICONIX 功能描述:*
SI9956DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC N T/R
SI9958DY 功能描述:MOSFET 20V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI9958DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 20V 3.5A 8-Pin SOIC N T/R
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*