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參數(shù)資料
| 型號： | SI9948AEY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 60-V (D-S), 175C MOSFET |
| 中文描述： | 雙P溝道60五（副），175葷MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | SI9948AEY |
Si9948AEY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70759
S-57253—Rev. B, 24-Feb-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –60 V, V
GS
= 0 V
–1
A
V
DS
= –60 V, V
GS
= 0 V, T
J
= 55 C
–10
On-State Drain Current
a
I
D(on)
V
DS
–5 V, V
GS
= –10 V
–15
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= –2.6 A
0.14
0.17
V
GS
= –4.5 V, I
D
= –2.1 A
0.20
0.26
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –2.6 A
5.0
S
Diode Forward Voltage
a
V
SD
I
S
= –2.0 A, V
GS
= 0 V
–1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –30 V V
V
GS
= –10 V, I
D
= –2.6 A
10 V I
2 6 A
10
20
Gate-Source Charge
Q
gs
2.5
nC
Gate-Drain Charge
Q
gd
1.8
Turn-On Delay Time
t
d(on)
V
= –30 ,
= 30
1 A V
–1 A, V
GEN
= –10 V, R
G
= 6
8
20
Rise Time
t
r
I
D
10 V R
10
20
Turn-Off Delay Time
t
d(off)
23
40
ns
Fall Time
t
f
12
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= –2.0 A, di/dt = 100 A/ s
50
90
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9948AEY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8 |
| SI9948AEY-E3 | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9948AEY-T1 | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9948AEY-T1-E3 | 功能描述:MOSFET 60V 2.6A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9948AEY-T1-GE3 | 功能描述:MOSFET 60V 2.6A 2.4W 170mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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