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參數(shù)資料
| 型號： | SI9942DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complimentary 20-V (D-S) MOSFET |
| 中文描述： | 免費20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 77K |
| 代理商： | SI9942DY |
Si9942DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
N-Ch
1.0
V
V
DS
= V
GS
, I
D
= –250 A
P-Ch
–1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 16 V, V
GS
= 0 V
N-Ch
2
A
V
DS
= –16 V, V
GS
= 0 V
P-Ch
–2
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55 C
N-Ch
25
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55 C
P-Ch
–25
O S
On-State Drain Current
D i C
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
N-Ch
10
A
V
DS
–5 V, V
GS
= –10 V
P-Ch
–10
V
DS
5 V, V
GS
= 4.5 V
N-Ch
2
V
DS
–5 V, V
GS
= –4.5 V
P-Ch
–2
D i S
Drain-Source On-State Resistance
O S
b
V
GS
= 10 V, I
D
= 1.0 A
N-Ch
0.07
0.125
r
DS(on)
V
GS
= –10 V, I
D
= 1.0 A
P-Ch
0.12
0.200
V
GS
= 4.5 V, I
D
= 0.5 A
N-Ch
0.105
0.250
V
GS
= –4.5 V, I
D
= 0.5 A
P-Ch
0.22
0.350
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.0 A
N-Ch
4.8
S
V
DS
= –15 V, I
D
= –3.0 A
P-Ch
3.0
Diode Forward Voltage
b
V
SD
I
S
= 1.25 A, V
GS
= 0 V
N-Ch
0.75
1.2
V
I
S
= –1.25 A, V
GS
= 0 V
P-Ch
–0.8
–1.2
Dynamic
a
Total Gate Charge
Q
g
N Ch
N-Channel
N Channel
N-Ch
7
25
P-Ch
6.7
25
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 10 V, I
D
= 2.3 A
N-Ch
0.75
nC
P-Channel
= 10 V V
= 10 V I
= 2 3 A
V
DS
= –10 V,
GS
= –10 V, I
D
= –2.3 A
P-Ch
1.3
Gate-Drain Charge
Q
gd
N-Ch
1.7
P-Ch
1.6
Turn-On Delay Time
t
d(on)
N Ch
N-Channel
N-Ch
6
15
P-Ch
10
40
Rise Time
t
r
V
= 20 V, R
= 20
1 A, V
GEN
= 10 V, R
G
= 6
N-Ch
10
20
I
D
P-Ch
12
40
Turn-Off Delay Time
t
d(off)
P-Channel
20 V R
V
= –20 V, R
= 20
–1 A, V
= –10 V, R
= 6
1 A, V
GEN
10 V, R
G
6
N-Ch
17
50
ns
I
D
P-Ch
20
90
Fall Time
t
f
N-Ch
10
50
P-Ch
10
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.25 A, di/dt = 100 A/ s
N-Ch
45
100
P-Ch
70
100
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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