參數(shù)資料
型號: SI9933DY
英文描述: Dual P-Channel Enhancement-Mode MOSFET
中文描述: 雙P溝道增強(qiáng)型MOSFET
文件頁數(shù): 4/4頁
文件大?。?/td> 48K
代理商: SI9933DY
Si9933ADY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4
Document Number: 70651
S-00652—Rev. B, 27-Mar-00
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
r
D
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
I
S
T
J
– Temperature ( C)
Time (sec)
P
–0.4
–0.2
0.0
0.2
0.4
0.6
0.8
–50
–25
0
25
50
75
100
125
150
0
0.04
0.08
0.12
0.16
0.20
0
2
4
6
8
10
0
10
20
30
40
0.01
0.1
1
10
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
= 150 C
1
0.1
0.01
I
D
= 3.2 A
I
D
= 250
μ
A
20
1
10
–3
10
–2
1
10
30
10
–1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
V
V
G
10
T
J
= 25 C
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