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參數(shù)資料
| 型號： | SI9933BDY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | 雙P溝道的2.5 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SI9933BDY-T1-E3 |
Si9933ADY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70651
S-00652—Rev. B, 27-Mar-00
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
–1
A
V
DS
= –10 V, V
GS
= 0 V, T
J
= 85 C
–3
On-State Drain Current
b
I
D(on)
V
DS
–5 V, V
GS
= –4.5 V
–16
A
V
DS
–5 V, V
GS
= –2.7 V
–3
D i S
Drain-Source On-State Resistance
O S
b
V
GS
= –4.5 V, I
D
= –3.2 A
0.06
0.075
r
DS(on)
V
GS
= –3.0 V, I
D
= –2.0 A
0.078
0.105
V
GS
= –2.7 V, I
D
= –1 A
0.085
0.115
Forward Transconductance
b
g
fs
V
DS
= –9 V, I
D
= –3.4 A
8
S
Diode Forward Voltage
b
V
SD
I
S
= –2.0 A, V
GS
= 0 V
–0.7
–1.2
V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= –6 V V
V
GS
= –4 5 V I
D
= –3.2 A
3 2 A
10
20
Gate-Source Charge
Q
gs
2.1
nC
Gate-Drain Charge
Q
gd
3.3
Turn-On Delay Time
t
d(on)
V
= –6 ,
= 6
1 A V
–1 A, V
GEN
= –4.5 V, R
G
= 6
6
16
40
Rise Time
t
r
I
D
4 5 V R
46
80
Turn-Off Delay Time
t
d(off)
40
70
ns
Fall Time
t
f
25
40
Source-Drain Reverse Recovery Time
t
rr
I
F
= –2.0 A, di/dt = 100 A/ s
60
100
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI9933BDY-T1-GE3 | 功能描述:MOSFET 20V 4.7A 2.0W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9933CDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI9933CDY-T1-E3 | 功能描述:MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9933CDY-T1-E3 | 制造商:Vishay Siliconix 功能描述:DUAL P CHANNEL MOSFET -20V SOIC |
| SI9933CDY-T1-GE3 | 功能描述:MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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