- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365563 > SI9410DY (FAIRCHILD SEMICONDUCTOR CORP) Single N-Channel Enhancement Mode MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI9410DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel Enhancement Mode MOSFET |
| 中文描述： | 7000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI9410DY |
Si9410BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72269
S-31409—Rev. A, 07-Jul-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 8.1 A
0.019
0.024
V
GS
= 4.5 V, I
D
= 6.9 A
0.026
0.033
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 8.1 A
20
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
15
23
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 8.1 A
3.2
nC
Gate-Drain Charge
Q
gd
2.5
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
15
25
Turn-Off Delay Time
t
d(off)
I
D
30
45
ns
Fall Time
t
f
11
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/ s
25
50
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 10 thru 5 V
T
C
= -125 C
-55 C
3 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI9420DY | N-Channel Enhancement-Mode MOSFET |
| SI91860 | 400-mA Smart Regulator for Network Interface Card |
| SI91860DY | 400-mA Smart Regulator for Network Interface Card |
| SI91860DY-T1 | 400-mA Smart Regulator for Network Interface Card |
| SI91860DY-T1-E3 | 400-mA Smart Regulator for Network Interface Card |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI9410DY,518 | 功能描述:MOSFET N-CH 30V 7A SOT96-1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| SI9410DYT1 | 制造商:SILICONIX 功能描述:* |
| SI9410DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 7A 8-Pin SOIC N T/R |
| SI9420DY | 功能描述:MOSFET 200V 1A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI9420DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 200V 1A 8-Pin SOIC N T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。