參數(shù)資料
型號(hào): SI8901EDB
廠商: Vishay Intertechnology,Inc.
英文描述: ESD-protected bidirectional P-Ch. MOSFET for battery protection circuits
中文描述: ESD保護(hù)雙向P溝道MOSFET,用于電池保護(hù)電路
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 220K
代理商: SI8901EDB
SPICE Device Model Si8901EDB
Vishay Siliconix
Bi-Directional P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
mode is extracted and optimized over the
55 to 125
°
C temperature
ranges under the pulsed 0-to-5V gate drive. The saturated output
impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72950
19-Apr-04
www.vishay.com
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI8901EDB_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Bi-Directional P-Channel 20-V (D-S) MOSFET
SI8901EDB-T2-E1 功能描述:MOSFET 20V 4.4A 1.7W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
Si8902B-A01-GS 功能描述:隔離器接口集成電路 2.5kV iso monitoring ADC with SPI bus RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 傳播延遲時(shí)間: 電源電壓-最大:5.5 V 電源電壓-最小:3 V 電源電流:3.6 mA 功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:SOIC-8 封裝:Tube
SI8902B-A01-GSR 制造商:Silicon Laboratories Inc 功能描述:2.5 KV ISOLATED MONITORING ADC WITH SPI BUS - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ADC ISO MONITORING 2.5KV SPI 制造商:Silicon Laboratories Inc 功能描述:IC ADC 10BIT SPI/SRL SOIC 制造商:Silicon Laboratories Inc 功能描述:5.0 kV Monitoring ADC with UART bus
Si8902D-A01-GS 功能描述:隔離器接口集成電路 2.5kV iso monitoring ADC with SPI bus RoHS:否 制造商:Texas Instruments 通道數(shù)量:2 傳播延遲時(shí)間: 電源電壓-最大:5.5 V 電源電壓-最小:3 V 電源電流:3.6 mA 功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:SOIC-8 封裝:Tube